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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Ic Compatible Processing of Si:Er for optoelectronics

MRS proceedings, 1993, Vol.301, Article 87

1993

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Applied physics letters, 1999-03, Vol.74 (9), p.1299-1301

1999

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Applied physics letters, 1998-11, Vol.73 (20), p.2980-2982

1998

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High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.416-419

1995

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Applied physics letters, 1997-11, Vol.71 (21), p.3141-3143

1997

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Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.533-543

1991

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

Applied physics letters, 1996-09, Vol.69 (10), p.1376-1378

1996

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Applied physics letters, 1997-06, Vol.70 (25), p.3332-3334

1997

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Iron gettering mechanisms in silicon

Journal of applied physics, 1996-09, Vol.80 (6), p.3275-3284

1996

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Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied physics letters, 1997-06, Vol.70 (24), p.3281-3283

1997

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Transient enhanced diffusion from decaborane molecular ion implantation

Applied physics letters, 1998-10, Vol.73 (14), p.2015-2017

1998

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The mechanism of iron gettering in boron-doped silicon

Applied physics letters, 1996-01, Vol.68 (1), p.51-53

1996

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

Physical review letters, 1984-06, Vol.52 (26), p.2360-2363

1984

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Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.182-186

2001

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Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

Materials science in semiconductor processing, 1998-04, Vol.1 (1), p.17-25

1998

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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1998-09, Vol.253 (1), p.269-274

1998

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The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

Applied physics letters, 1997-06, Vol.70 (22), p.3002-3004

1997

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Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation

MRS proceedings, 1983, Vol.27, Article 211

1983

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The Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation

Journal of the Electrochemical Society, 1996-04, Vol.143 (4), p.1406-1409

1996

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Proximity gettering of Au to ion beam induced defects in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.253-256

1995

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Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs

Applied physics letters, 1991-02, Vol.58 (5), p.523-525

1991

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The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2002-01, Vol.200-202, p.145-152

2002

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Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence

MRS proceedings, 2000, Vol.610, Article B9.4

2000

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Ic Compatible Processing of Si:Er for optoelectronics

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology

Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

The interstitial fraction of diffusivity of common dopants in Si

Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Iron gettering mechanisms in silicon

Transient enhanced diffusion of Sb and B due to MeV silicon implants

Transient enhanced diffusion from decaborane molecular ion implantation

The mechanism of iron gettering in boron-doped silicon

Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation

The Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation

Proximity gettering of Au to ion beam induced defects in silicon

Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs

The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing

Quantitative Depth Profiles of Vacancy Cluster Defects Produced by MeV Ion Implantation in Si: Species and dose Dependence

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