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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Scientific reports, 2024-03, Vol.14 (1), p.7440-7440, Article 7440

2024

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Scientific reports, 2022-01, Vol.12 (1), p.658-658, Article 658

2022

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Using machine learning with optical profilometry for GaN wafer screening

Scientific reports, 2023-02, Vol.13 (1), p.3352-3352, Article 3352

2023

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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

Macromolecules, 2016-09, Vol.49 (17), p.6462-6470

2016

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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Crystals (Basel), 2023-04, Vol.13 (5), p.736

2023

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Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing

ACS combinatorial science, 2016-09, Vol.18 (9), p.548-558

2016

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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

Applied physics reviews, 2022-03, Vol.9 (1)

2022

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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

Crystals (Basel), 2022-05, Vol.12 (5), p.623

2022

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10 kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

IEEE electron device letters, 2023-06, Vol.44 (8), p.1-1

2023

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Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing

ACS applied materials & interfaces, 2017-09, Vol.9 (37), p.31317-31324

2017

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Applied physics letters, 2022-11, Vol.121 (19)

2022

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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

Journal of electronic materials, 2024-06, Vol.53 (6), p.2798-2805

2024

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3552-3559

2024

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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

IEEE electron device letters, 2024-05, Vol.45 (5), p.873-876

2024

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Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Applied physics letters, 2024-01, Vol.124 (5)

2024

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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry

Applied physics letters, 2020-12, Vol.117 (23)

2020

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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Journal of physics. D, Applied physics, 2021-01, Vol.54 (3)

2021

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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN

Physica status solidi. A, Applications and materials science, 2024-11, Vol.221 (21), p.n/a

2024

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Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates

Chemistry of materials, 2020-12, Vol.32 (23), p.10155-10164

2020

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Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Improving vertical GaN p–n diode performance with room temperature defect mitigation

Semiconductor science and technology, 2024-01, Vol.39 (1), p.15004

2024

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Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

Journal of electronic materials, 2024-06, Vol.53 (6), p.2811-2816

2024

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Using machine learning with optical profilometry for GaN wafer screening

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

10 kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry

Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN

Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Improving vertical GaN p–n diode performance with room temperature defect mitigation

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

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