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Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface

Journal of applied polymer science, 2014-01, Vol.131 (2), p.np-n/a

2014

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High output power GaN-based light-emitting diodes using an electrically reverse-connected p -Schottky diode and p -InGaN - GaN superlattice

Applied physics letters, 2008-08, Vol.93 (8), p.081118-081118-3

Jang, Ja-Soon

2008

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Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

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Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1957-1962

2016

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Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

Scientific reports, 2015-06, Vol.5 (1), p.10861, Article 10861

2015

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Schottky barrier characteristics of Pt contacts to n -type InGaN

Journal of applied physics, 2006-04, Vol.99 (7), p.073704-073704-4

2006

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Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

Electronic Materials Letters, 2014, 10(2), , pp.411-416

2014

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Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer

Synthetic metals, 2013-12, Vol.185-186, p.167-171

2013

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Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity

Optics express, 2014-01, Vol.22 (1), p.908-915

2014

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Optimum condition for the growth of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells

Journal of alloys and compounds, 2009-04, Vol.473 (1-2), p.L28-L32

2009

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Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p -GaN

Journal of applied physics, 2000-09, Vol.88 (5), p.3064-3066

2000

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Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

Applied physics letters, 2000-05, Vol.76 (19), p.2743-2745

2000

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Low-resistance Pt/Ni/Au ohmic contacts to p -type GaN

Applied physics letters, 1999-01, Vol.74 (1), p.70-72

1999

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High-performance and current crowding-free InGaN-GaN- based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

Frontiers of Optoelectronics, 2012-06, Vol.5 (2), p.127-132

2012

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High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (34), p.8873-8880

2015

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Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(5), 53, pp.492-499

2013

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Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN

Applied physics letters, 2000-05, Vol.76 (20), p.2898-2900

2000

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Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p -type GaN

Applied physics letters, 2006-12, Vol.89 (26), p.262115-262115-3

2006

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Real-time smart lighting control using human motion tracking from depth camera

Journal of real-time image processing, 2015-12, Vol.10 (4), p.805-820

2015

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Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes

Electronic Materials Letters, 2013, 9(2), , pp.245-249

2013

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Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

Semiconductor science and technology, 2006-05, Vol.21 (5), p.L37-L39

2006

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Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

Materials chemistry and physics, 2014-01, Vol.143 (2), p.801-805

2014

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LED Colors and Worker Stress Response after a Flower Arrangement Activity

원예과학기술지, 2018, 36(3), , pp.435-443

2018

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Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

Current Applied Physics, 2012, 12(4), , pp.1081-1083

2012

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Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface

High output power GaN-based light-emitting diodes using an electrically reverse-connected p -Schottky diode and p -InGaN - GaN superlattice

Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED

Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

Schottky barrier characteristics of Pt contacts to n -type InGaN

Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer

Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity

Optimum condition for the growth of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells

Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p -GaN

Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

Low-resistance Pt/Ni/Au ohmic contacts to p -type GaN

High-performance and current crowding-free InGaN-GaN- based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p -GaN

Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p -type GaN

Real-time smart lighting control using human motion tracking from depth camera

Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes

Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

LED Colors and Worker Stress Response after a Flower Arrangement Activity

Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

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