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Manufacturing parts optimization in the three-dimensional printing process by the Taguchi method

Journal of the Chinese Institute of Engineers, 2010-01, Vol.33 (1), p.121-130

2010

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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.649-651

2003

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Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.646-648

2003

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Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells

Japanese Journal of Applied Physics, 2006-07, Vol.45 (7L), p.L647

2006

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Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Materials transactions, 2007-05, Vol.48 (5), p.894-898

2007

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Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

Journal of crystal growth, 2007, Vol.298, p.767-771

2007

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1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells

Physica status solidi. C, 2007-06, Vol.4 (7), p.2854-2858

2007

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Microwave-Assisted SPME/On-Fiber Derivatization of Chromium(III) in Water Followed by GC-MS Analysis

Chromatographia, 2010, Vol.71 (9-10), p.957-961

2010

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Rb2REGaSi4O12 (RE = Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing REO7 Pentagonal Bipyramids

Inorganic chemistry, 2008-03, Vol.47 (6), p.1910-1912

2008

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High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Japanese Journal of Applied Physics, 2004, Vol.43 (3R), p.968-969

2004

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Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry

Journal of electronic materials, 2003-05, Vol.32 (5), p.312-315

2003

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Growth of YIG and BiGdIG single crystals for magnetooptical applications

Materials chemistry and physics, 1996-08, Vol.45 (2), p.124-129

1996

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High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Applied physics letters, 2004-10, Vol.85 (14), p.2797-2799

2004

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Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate

Optical engineering, 2005-11, Vol.44 (11), p.111304

Hsu, Jung-Tsung

2005

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Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3560

2006

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The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas

Journal of crystal growth, 2004-01, Vol.260 (1-2), p.79-84

2004

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Influence of Growth Temperature on Surface Morphologies of GaN Crystals Grown on Dot-Patterned Substrate by Hydride Vapor Phase Epitaxy

Journal of electroceramics, 2004-07, Vol.13 (1-3), p.839-846

2004

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Photoreflectance studies of Ga0.5In0.5P/GaAs heterostructures grown by metalorganic chemical vapor deposition technique

Japanese journal of applied physics, 1992-05, Vol.31 (5A), p.L571-L573

1992

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Rb 2 REGaSi 4 O 12 (RE = Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing REO 7 Pentagonal Bipyramids

Inorganic chemistry, 2008-03, Vol.47 (6), p.1910-1912

2008

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The growth mechanism of GaN grown by hydride vapor phase epitaxy in N 2 and H 2 carrier gas

Journal of crystal growth, 2004-01, Vol.260 (1), p.79-84

2004

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ChemInform Abstract: Rb2LnGaSi4O12 (Ln: Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing LnO7 Pentagonal Bipyramids

ChemInform, 2008-06, Vol.39 (24), p.no-no

2008

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Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Improvement of InGaN/GaN laser diodes by using a Si-doped In/0.23/Ga/0.77/N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Improvement of InGaN/GaN laser diodes by using a Si-doped In sub(0.23)Ga sub(0.77)N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-01, Vol.24 (4)

2003

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Manufacturing parts optimization in the three-dimensional printing process by the Taguchi method

Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells

Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers

Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells

Microwave-Assisted SPME/On-Fiber Derivatization of Chromium(III) in Water Followed by GC-MS Analysis

Rb2REGaSi4O12 (RE = Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing REO7 Pentagonal Bipyramids

High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry

Growth of YIG and BiGdIG single crystals for magnetooptical applications

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate

Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas

Influence of Growth Temperature on Surface Morphologies of GaN Crystals Grown on Dot-Patterned Substrate by Hydride Vapor Phase Epitaxy

Photoreflectance studies of Ga0.5In0.5P/GaAs heterostructures grown by metalorganic chemical vapor deposition technique

Rb 2 REGaSi 4 O 12 (RE = Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing REO 7 Pentagonal Bipyramids

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N 2 and H 2 carrier gas

ChemInform Abstract: Rb2LnGaSi4O12 (Ln: Y, Eu, Gd, Tb): Luminescent Mixed-Anion Double Layer Silicates Containing Chains of Edge-Sharing LnO7 Pentagonal Bipyramids

Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

Improvement of InGaN/GaN laser diodes by using a Si-doped In/0.23/Ga/0.77/N/GaN short-period superlattice tunneling contact layer

Improvement of InGaN/GaN laser diodes by using a Si-doped In sub(0.23)Ga sub(0.77)N/GaN short-period superlattice tunneling contact layer

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