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A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

Analog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157

2010

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A 0.0018 mm2 frequency-to-digital-converter-based CMOS smart temperature sensor

Analog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157

2010

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A 0.004-mm ^ Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

IEEE transactions on circuits and systems. II, Express briefs, 2008-02, Vol.55 (2), p.116-120

2008

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A 0.004-mm super(2) Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

IEEE transactions on circuits and systems. II, Express briefs, 2008-01, Vol.55 (2)

2008

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A 0.004-mm2 Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

IEEE transactions on circuits and systems. II, Express briefs, 2008-02, Vol.55 (2), p.116

2008

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A 0.0046mm2 6.7μW Three-Stage Amplifier Capable of Driving 0.5-to-1.9nF Capacitive Load with >0.68MHz GBW without Compensation Zero

2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2

2020

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A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers, 2006, p.104-105

2006

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A 0.076mm2 3.5GHz spread-spectrum clock generator with memoryless Newton-Raphson modulation profile in 0.13μm CMOS

2011 IEEE International Solid-State Circuits Conference, 2011, p.360-362

2011

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Y 0.08Sr 0.92Fe x Ti 1− x O 3− δ perovskite for solid oxide fuel cell anodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2012, Vol.177 (2), p.151-156

2012

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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503

1998

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0.1-nm slim bandwidth transmission of a 2.5-Gbit/s spectrum-sliced incoherent channel using an all-optical bandwidth expansion technique at the receiver

OFC '98. Optical Fiber Communication Conference and Exhibit. Technical Digest. Conference Edition. 1998 OSA Technical Digest Series Vol.2 (IEEE Cat. No.98CH36177), 1998, p.127-128

1998

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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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0.13 μm modular BCD technology enable to embedding high density E2PROM, RF and hall sensor suitable for IoT application

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.419-422

2016

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A 0.15 /spl mu/m NAND flash technology with 0.11 /spl mu/m/sup 2/ cell size for 1 Gbit flash memory

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.767-770

2000

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A 0.166 pJ/b/pF, 3.5–5 Gb/s TSV I/O Interface With V OH Drift Control

IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1822-1826

2021

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A 0.166 pJ/b/pF, 3.5-5 Gb/s TSV I/O Interface With VOH Drift Control

IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1822-1826

2021

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A 0.17-1.4GHz low-jitter all digital DLL with TDC-based DCC using pulse width detection scheme

ESSCIRC 2008 - 34th European Solid-State Circuits Conference, 2008, p.82-85

2008

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A 0.18-mum 3.1-4.8 GHz CMOS wideband LNA for UWB system

Microwave and optical technology letters, 2008-09, Vol.50 (9), p.2368-2371

2008

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A 0.18 mum 3.1-4.8 GHz CMOS wideband single to differential LNA for UWB system

Microwave and optical technology letters, 2009-07, Vol.51 (7), p.1778-1781

2009

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A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.40-512 Vol.1

2004

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A 0.18 /spl mu/m CMOS SoC of a front-end hardware platform for DVD-multi recorders

2005 Digest of Technical Papers. International Conference on Consumer Electronics, 2005. ICCE, 2005, p.53-54

2005

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A 0.18-μm 3.1-4.8 GHz CMOS wideband LNA for UWB system

Microwave and optical technology letters, 2008-09, Vol.50 (9), p.2368-2371

2008

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A 0.18 μm 3.1-4.8 GHz CMOS wideband single to differential LNA for UWB system

Microwave and optical technology letters, 2009-07, Vol.51 (7), p.1778-1781

2009

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0.18 μm CMOS Power Amplifier for Subgigahertz Short-Range Wireless Communications

The Journal of Korean Institute of Electromagnetic Engineering and Science, 2018-11, Vol.29 (11), p.834-841

2018

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A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

First edition, 2004

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A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

A 0.0018 mm2 frequency-to-digital-converter-based CMOS smart temperature sensor

A 0.004-mm ^ Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

A 0.004-mm super(2) Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

A 0.004-mm2 Portable Multiphase Clock Generator Tile for 1.2-GHz RISC Microprocessor

A 0.0046mm2 6.7μW Three-Stage Amplifier Capable of Driving 0.5-to-1.9nF Capacitive Load with >0.68MHz GBW without Compensation Zero

A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

A 0.076mm2 3.5GHz spread-spectrum clock generator with memoryless Newton-Raphson modulation profile in 0.13μm CMOS

Y 0.08Sr 0.92Fe x Ti 1− x O 3− δ perovskite for solid oxide fuel cell anodes

0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

0.1-nm slim bandwidth transmission of a 2.5-Gbit/s spectrum-sliced incoherent channel using an all-optical bandwidth expansion technique at the receiver

A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

0.13 μm modular BCD technology enable to embedding high density E2PROM, RF and hall sensor suitable for IoT application

A 0.15 /spl mu/m NAND flash technology with 0.11 /spl mu/m/sup 2/ cell size for 1 Gbit flash memory

A 0.166 pJ/b/pF, 3.5–5 Gb/s TSV I/O Interface With V OH Drift Control

A 0.166 pJ/b/pF, 3.5-5 Gb/s TSV I/O Interface With VOH Drift Control

A 0.17-1.4GHz low-jitter all digital DLL with TDC-based DCC using pulse width detection scheme

A 0.18-mum 3.1-4.8 GHz CMOS wideband LNA for UWB system

A 0.18 mum 3.1-4.8 GHz CMOS wideband single to differential LNA for UWB system

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

A 0.18 /spl mu/m CMOS SoC of a front-end hardware platform for DVD-multi recorders

A 0.18-μm 3.1-4.8 GHz CMOS wideband LNA for UWB system

A 0.18 μm 3.1-4.8 GHz CMOS wideband single to differential LNA for UWB system

0.18 μm CMOS Power Amplifier for Subgigahertz Short-Range Wireless Communications

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

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