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Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures

Nature nanotechnology, 2021-09, Vol.16 (9), p.981-988

2021

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Current-driven dynamics and inhibition of the skyrmion Hall effect of ferrimagnetic skyrmions in GdFeCo films

Nature communications, 2018-03, Vol.9 (1), p.959-8, Article 959

2018

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Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

Nano letters, 2014-12, Vol.14 (12), p.6976-6982

2014

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Skyrmion-based artificial synapses for neuromorphic computing

Nature electronics, 2020-03, Vol.3 (3), p.148-155

2020

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All-Electrical Measurement of Interfacial Dzyaloshinskii-Moriya Interaction Using Collective Spin-Wave Dynamics

Nano letters, 2016-01, Vol.16 (1), p.62-67

2016

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Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe3GeTe2 through Hole Doping

Nano letters, 2020-01, Vol.20 (1), p.95-100

2020

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Control of Spin Precession in a Spin-Injected Field Effect Transistor

Science (American Association for the Advancement of Science), 2009-09, Vol.325 (5947), p.1515-1518

2009

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Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy

Nature communications, 2017-05, Vol.8 (1), p.15573-15573, Article 15573

2017

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Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes

Scientific reports, 2020-03, Vol.10 (1), p.3995-3995, Article 3995

2020

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Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect

Nature nanotechnology, 2015-08, Vol.10 (8), p.666-670

2015

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Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide

Nano letters, 2020-05, Vol.20 (5), p.3435-3441

2020

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Deterministic creation and deletion of a single magnetic skyrmion observed by direct time-resolved X-ray microscopy

Nature electronics, 2018-05, Vol.1 (5), p.288-296

2018

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Reconfigurable spin logic device using electrochemical potentials

Applied physics letters, 2019-04, Vol.114 (15)

2019

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Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature

Electronic Materials Letters, 2021, 17(4), , pp.324-330

2021

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Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Nature communications, 2017-06, Vol.8 (1), p.15722-15722, Article 15722

2017

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Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

AIP advances, 2021-04, Vol.11 (4), p.045036-045036-7

2021

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Spin regulation in composite spin-filter barrier devices

Nature communications, 2014-04, Vol.5 (1), p.3682-3682, Article 3682

2014

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Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

Journal of physics. D, Applied physics, 2015-06, Vol.48 (22), p.225002-6

2015

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Spin-polarization-induced anisotropic magnetoresistance in a two-dimensional Rashba system

Current applied physics, 2017-04, Vol.17 (4), p.513-516

2017

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Spin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four-terminal methods

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Uniaxial magnetic anisotropy in epitaxial Fe/MgO films on GaAs(001)

Journal of magnetism and magnetic materials, 2014-06, Vol.360, p.109-112

2014

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Fermi surface distortion induced by interaction between Rashba and Zeeman effects

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Electrical spin injection and detection in an InAs quantum well

Applied physics letters, 2007-01, Vol.90 (2), p.022101-022101-3

2007

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Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

ACS nano, 2013-10, Vol.7 (10), p.9106-9114

2013

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Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures

Current-driven dynamics and inhibition of the skyrmion Hall effect of ferrimagnetic skyrmions in GdFeCo films

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

Skyrmion-based artificial synapses for neuromorphic computing

All-Electrical Measurement of Interfacial Dzyaloshinskii-Moriya Interaction Using Collective Spin-Wave Dynamics

Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe3GeTe2 through Hole Doping

Control of Spin Precession in a Spin-Injected Field Effect Transistor

Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy

Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes

Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect

Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide

Deterministic creation and deletion of a single magnetic skyrmion observed by direct time-resolved X-ray microscopy

Reconfigurable spin logic device using electrochemical potentials

Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

Spin regulation in composite spin-filter barrier devices

Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

Spin-polarization-induced anisotropic magnetoresistance in a two-dimensional Rashba system

Spin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four-terminal methods

Uniaxial magnetic anisotropy in epitaxial Fe/MgO films on GaAs(001)

Fermi surface distortion induced by interaction between Rashba and Zeeman effects

Electrical spin injection and detection in an InAs quantum well

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

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