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Characterization of highly boron-doped Si, Si1-xGex and Ge layers by high-resolution transmission electron microscopy

Journal of crystal growth, 1995-12, Vol.157 (1-4), p.80-84

1995

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Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy. A transmission electron microscopy study

Journal of crystal growth, 1999, Vol.196 (1), p.97-110

1999

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1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

Journal of luminescence, 1998, Vol.80 (1), p.309-314

1998

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Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

Thin solid films, 1998-05, Vol.321 (1-2), p.223-227

1998

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Intense photoluminescence observed in modulation doped Si/SiGe quantum well structures

Applied surface science, 1996-08, Vol.102, p.298-302

1996

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Device aspects of Er-doped Si structures for optoelectric interconnect applications

Physica scripta, 1999-01, Vol.1999 (1), p.143

1999

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Electrical characterization and the strain compensation effect and thermal stability of B-doped Si1-xGex/Si heterostructures

Semiconductor science and technology, 1996-10, Vol.11 (10), p.1396-1401

1996

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Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Applied physics letters, 1997-06, Vol.70 (25), p.3383-3385

1997

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Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy

Optical materials, 2000, Vol.14 (3), p.259-265

2000

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A silicon molecular beam epitaxy system dedicated to device-oriented material research

Journal of crystal growth, 1995-12, Vol.157 (1), p.285-294

1995

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Injection of self-interstitials during sputter depth profiling of Si at room temperature

Applied physics letters, 1998-11, Vol.73 (21), p.3088-3089

1998

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Er-doped edge emitting devices with a SiGe waveguide

Journal of luminescence, 1998-12, Vol.80 (1), p.329-333

1998

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Optimization of growth conditions for strained Si/Si1-yCy structures

Thin solid films, 1998-05, Vol.321 (1-2), p.15-20

1998

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Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation

Materials science in semiconductor processing, 2000-10, Vol.3 (5), p.523-528

2000

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Luminescence from Si-Si1-xGex/Si1-yCy-Si structures

Journal of luminescence, 1998-12, Vol.80 (1-4), p.497-501

1998

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Growth of strained Si/Si1-yCy/Si1-xGex structures by MBE

Vacuum, 1998-03, Vol.49 (3), p.185-188

1998

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Lattice distortion in dry-etched Si/SiGe quantum dot array studied by 2D reciprocal space mapping using synchrotron X-ray diffraction

Thin solid films, 1997-02, Vol.294 (1), p.300-303

1997

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Strain characterization of Ge1-xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

Journal of crystal growth, 1996-10, Vol.167 (3-4), p.495-501

1996

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The Outcome of Children Born with Pulmonary Atresia and Intact Ventricular Septum in Sweden from 1980 to 1999

Scandinavian cardiovascular journal : SCJ, 2001, Vol.35 (3), p.192-198

2001

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Si 1−y C y / Si (001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

Applied physics letters, 1997-08, Vol.71 (5), p.653-655

1997

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Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

Applied physics letters, 1997-08, Vol.71 (8), p.1023-1025

1997

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Hall factor and drift mobility for hole transport in strained Si 1−x Ge x alloys

Journal of applied physics, 1997-02, Vol.81 (3), p.1264-1269

1997

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Incorporation and luminescence properties of Er sub(2)O sub(3) and ErF sub(3) doped Si layers grown by molecular beam epitaxy

Thin solid films, 1998-05, Vol.321, p.223-227

1998

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Electrical characterization and the strain compensation effect and thermal stability of B-doped heterostructures

Semiconductor science and technology, 1996-10, Vol.11 (10), p.1396-1401

1996

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Characterization of strained Si/Si1−yCy structures prepared by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-05, Vol.16 (3), p.1621-1626

1998

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Characterization of highly boron-doped Si, Si1-xGex and Ge layers by high-resolution transmission electron microscopy

Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy. A transmission electron microscopy study

1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy

Intense photoluminescence observed in modulation doped Si/SiGe quantum well structures

Device aspects of Er-doped Si structures for optoelectric interconnect applications

Electrical characterization and the strain compensation effect and thermal stability of B-doped Si1-xGex/Si heterostructures

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy

A silicon molecular beam epitaxy system dedicated to device-oriented material research

Injection of self-interstitials during sputter depth profiling of Si at room temperature

Er-doped edge emitting devices with a SiGe waveguide

Optimization of growth conditions for strained Si/Si1-yCy structures

Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation

Luminescence from Si-Si1-xGex/Si1-yCy-Si structures

Growth of strained Si/Si1-yCy/Si1-xGex structures by MBE

Lattice distortion in dry-etched Si/SiGe quantum dot array studied by 2D reciprocal space mapping using synchrotron X-ray diffraction

Strain characterization of Ge1-xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

The Outcome of Children Born with Pulmonary Atresia and Intact Ventricular Septum in Sweden from 1980 to 1999

Si 1−y C y / Si (001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy

Hall factor and drift mobility for hole transport in strained Si 1−x Ge x alloys

Incorporation and luminescence properties of Er sub(2)O sub(3) and ErF sub(3) doped Si layers grown by molecular beam epitaxy

Electrical characterization and the strain compensation effect and thermal stability of B-doped heterostructures

Characterization of strained Si/Si1−yCy structures prepared by molecular beam epitaxy

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