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Impact of pre-emptive contact precautions for outborn neonates on the incidence of healthcare-associated meticillin-resistant Staphylococcus aureus transmission in a Japanese neonatal intensive care unit

The Journal of hospital infection, 2013-05, Vol.84 (1), p.66-70

2013

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Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2002-04, Vol.237, p.1206-1212

2002

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Interface states in abrupt SiO2/4H- and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters

Materials science forum, 2004-01, Vol.457-460, p.1297-1300

2004

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Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation

Japanese Journal of Applied Physics, 2001-10, Vol.40 (10A), p.L1012-L1014

2001

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Interface States at the SiO2/4H-SiC(0001) Interface from First-principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Materials Science Forum, 2005, Vol.483-485, p.573-576

2005

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Creatine Kinase Gene Mutation in a Patient with Muscle Creatine Kinase Deficiency

Clinical chemistry (Baltimore, Md.), 2001-11, Vol.47 (11), p.1967-1973

2001

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Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Materials science forum, 2002-04, Vol.389-393, p.171-174

2002

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4H-SiC Epitaxial Growth for High-Power Devices

Materials science forum, 2003-09, Vol.433-436, p.131-136

2003

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LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Materials science forum, 2000-05, Vol.338-342, p.145-148

2000

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A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Materials science forum, 2002-04, Vol.389-393, p.1137-1140

2002

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Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Materials science forum, 2003-09, Vol.433-436, p.261-264

2003

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Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

MRS proceedings, 2004, Vol.815, Article J2.1

2004

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Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations

Materials science forum, 2001-01, Vol.353-356, p.311-314

2001

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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Materials science forum, 2002-04, Vol.389-393, p.1141-1144

2002

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In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

Materials science forum, 2002-04, Vol.389-393, p.709-712

2002

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Vibrational study on the carbonization of Si surface

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.531-534

1999

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Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Materials science forum, 2001-01, Vol.353-356, p.131-134

2001

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The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Materials science forum, 2002-04, Vol.389-393, p.1013-1016

2002

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Atomic and electronic structures of heat treated 6H–SiC surface

Applied surface science, 1998-06, Vol.130, p.593-597

1998

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Thioredoxin as a biomarker for oxidative stress in patients with rheumatoid arthritis

Molecular immunology, 2002-02, Vol.38 (10), p.765-772

2002

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Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes

Materials science forum, 2002-04, Vol.389-393, p.1297-1300

2002

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Photoemission study of 6H-SiC(0001)Si face

Applied surface science, 1997-06, Vol.117, p.794-797

1997

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Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12R), p.6496-6500

2000

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A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99-101

2005

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A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99-101

2005

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Impact of pre-emptive contact precautions for outborn neonates on the incidence of healthcare-associated meticillin-resistant Staphylococcus aureus transmission in a Japanese neonatal intensive care unit

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Interface states in abrupt SiO2/4H- and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters

Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation

Interface States at the SiO2/4H-SiC(0001) Interface from First-principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Creatine Kinase Gene Mutation in a Patient with Muscle Creatine Kinase Deficiency

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

4H-SiC Epitaxial Growth for High-Power Devices

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces

Vibrational study on the carbonization of Si surface

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Atomic and electronic structures of heat treated 6H–SiC surface

Thioredoxin as a biomarker for oxidative stress in patients with rheumatoid arthritis

Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes

Photoemission study of 6H-SiC(0001)Si face

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

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