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Study on proton irradiation effect of GaN optical and electrical properties

Journal of the Korean Physical Society, 2023-09, Vol.83 (5), p.372-380

2023

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Giant Goos-Hänchen Shifts in Au-ITO-TMDCs-Graphene Heterostructure and Its Potential for High Performance Sensor

Sensors (Basel, Switzerland), 2020-02, Vol.20 (4), p.1028

2020

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Design and analysis of slow-light Bloch slot waveguides for on-chip gas sensing

Journal of the Optical Society of America. B, Optical physics, 2020-02, Vol.37 (2), p.257

2020

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CSRR DGS-Based Bandpass Negative Group Delay Circuit Design

IEEE access, 2023-01, Vol.11, p.1-1

2023

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Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors

Applied physics. A, Materials science & processing, 2022-05, Vol.128 (5), Article 460

2022

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Analytical Design of Dual-Band Negative Group Delay Circuit With Multi-Coupled Lines

IEEE access, 2020, Vol.8, p.72749-72756

2020

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S-Parameter Model of Three Parallel Interconnect Lines Generating Negative Group-Delay Effect

IEEE access, 2018, Vol.6, p.57152-57159

2018

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The Design Method of the Active Negative Group Delay Circuits Based on a Microwave Amplifier and an RL-Series Network

IEEE access, 2018-01, Vol.6, p.33849-33858

2018

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Electrostatic Discharge Characteristics of Cable Discharge Event

Journal of Electrical Engineering & Technology, 2019, 14(1), , pp.369-377

2019

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Xenon fluid state model and evaluation of working medium in satellite electric propulsion system

Vacuum, 2024-12, Vol.230, p.113603, Article 113603

2024

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Experiment and simulation analysis of BMM electrostatic discharge simulator

2017 IEEE 5th International Symposium on Electromagnetic Compatibility (EMC-Beijing), 2017, p.1-4

2017

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Discharge characteristics of a needle-to-plate electrode at a micro-scale gap

Plasma science & technology, 2018-05, Vol.20 (5), p.54017

2018

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Design of Multi-Scale Negative Group Delay Circuit for Sensors Signal Time-Delay Cancellation

IEEE sensors journal, 2019-10, Vol.19 (19), p.8951-8962

2019

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Highly sensitive based on a Mach-Zehnder interferometer with double-slot hybrid plasmonic waveguide

Optik (Stuttgart), 2022-11, Vol.270, p.169995, Article 169995

2022

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Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs

Semiconductor science and technology, 2023-08, Vol.38 (8), p.85010

2023

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Theoretical investigation of an enhanced Goos–Hänchen shift sensor based on a BlueP/TMDC/graphene hybrid

Applied optics (2004), 2020-09, Vol.59 (27), p.8355

2020

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Quad-Band NGD Investigation on Crossed Resonator Interconnect Structure

IEEE transactions on circuits and systems. II, Express briefs, 2022-12, Vol.69 (12), p.4789-4793

2022

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Canonical transfer function of band-pass NGD circuit

IET circuits, devices & systems, 2019-03, Vol.13 (2), p.125-130

2019

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Characteristics and underlying physics of ionic wind in dc corona discharge under different polarities

Chinese physics B, 2019-07, Vol.28 (7), p.75202

2019

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Design of an arbitrary ratio optical power splitter based on a discrete differential multiobjective evolutionary algorithm

Applied optics (2004), 2020-02, Vol.59 (6), p.1780

2020

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Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Electronics (Basel), 2023-03, Vol.12 (6), p.1473

2023

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Characteristics and underlying physics of ionic wind in dc corona discharge under different polarities Project supported by China Postdoctoral Science Foundation (Grant No. 3020036721801) and Electrostatic Research Foundation of Liu Shanghe Academicians Experts Workstation, Beijing Orient Institute of Measurement and Test, China (Grant No. BOIMTLSHJD20181005)

Chinese physics B, 2019-07, Vol.28 (7)

2019

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Measurement Characterization of Band‐Pass NGD Time Domain of a 101O‐Topology Passive Circuit

Radio science, 2022-04, Vol.57 (4), p.n/a

2022

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Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2020-12, Vol.34 (Supp01), p.2150008

2020

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Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics (Basel), 2021-02, Vol.10 (4), p.454

2021

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Study on proton irradiation effect of GaN optical and electrical properties

Giant Goos-Hänchen Shifts in Au-ITO-TMDCs-Graphene Heterostructure and Its Potential for High Performance Sensor

Design and analysis of slow-light Bloch slot waveguides for on-chip gas sensing

CSRR DGS-Based Bandpass Negative Group Delay Circuit Design

Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors

Analytical Design of Dual-Band Negative Group Delay Circuit With Multi-Coupled Lines

S-Parameter Model of Three Parallel Interconnect Lines Generating Negative Group-Delay Effect

The Design Method of the Active Negative Group Delay Circuits Based on a Microwave Amplifier and an RL-Series Network

Electrostatic Discharge Characteristics of Cable Discharge Event

Xenon fluid state model and evaluation of working medium in satellite electric propulsion system

Experiment and simulation analysis of BMM electrostatic discharge simulator

Discharge characteristics of a needle-to-plate electrode at a micro-scale gap

Design of Multi-Scale Negative Group Delay Circuit for Sensors Signal Time-Delay Cancellation

Highly sensitive based on a Mach-Zehnder interferometer with double-slot hybrid plasmonic waveguide

Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs

Theoretical investigation of an enhanced Goos–Hänchen shift sensor based on a BlueP/TMDC/graphene hybrid

Quad-Band NGD Investigation on Crossed Resonator Interconnect Structure

Canonical transfer function of band-pass NGD circuit

Characteristics and underlying physics of ionic wind in dc corona discharge under different polarities

Design of an arbitrary ratio optical power splitter based on a discrete differential multiobjective evolutionary algorithm

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Measurement Characterization of Band‐Pass NGD Time Domain of a 101O‐Topology Passive Circuit

Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs

Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

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