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3D TCAD Simulation for CMOS Nanoeletronic Devices

1, 2017

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Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

IEEE electron device letters, 2015-07, Vol.36 (7), p.654-656

2015

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Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

Applied physics letters, 2017-01, Vol.110 (3)

2017

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Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

IEEE electron device letters, 2013-12, Vol.34 (12), p.1482-1484

2013

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Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure

IEEE electron device letters, 2015-02, Vol.36 (2), p.150-152

2015

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Hybrid P-Channel/N-Substrate Poly-Si Nanosheet Junctionless Field-Effect Transistors With Trench and Gate-All-Around Structure

IEEE transactions on nanotechnology, 2018-09, Vol.17 (5), p.1014-1019

2018

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Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis

IEEE electron device letters, 2013-02, Vol.34 (2), p.157-159

2013

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Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

IEEE electron device letters, 2015-02, Vol.36 (2), p.105-107

2015

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Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length

IEEE electron device letters, 2015-07, Vol.36 (7), p.645-647

2015

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Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory

Applied physics letters, 2014-07, Vol.105 (4)

2014

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A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

Nanoscale research letters, 2014-11, Vol.9 (1), p.603-603, Article 603

2014

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Improved capacity and rate capability of Ru-doped and carbon-coated Li4Ti5O12 anode material

Journal of alloys and compounds, 2011-06, Vol.509 (24), p.6965-6968

2011

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High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2364-2370

2014

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Electroless-plated tin compounds on carbonaceous mixture as anode for lithium-ion battery

Journal of power sources, 2009-09, Vol.193 (2), p.810-815

2009

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Synthesis of confinement structure of Sn/C-C (MWCNTs) composite anode materials for lithium ion battery by carbothermal reduction

Diamond and related materials, 2011-03, Vol.20 (3), p.413-417

2011

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Band-to-Band Hot Hole Erase Mechanism of p-Channel Junctionless Silicon Nanowire Nonvolatile Memory

IEEE transactions on nanotechnology, 2016-01, Vol.15 (1), p.80-84

2016

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Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory

IEEE transactions on nanotechnology, 2014-07, Vol.13 (4), p.814-819

2014

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Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Superlattices and microstructures, 2017-11, Vol.111, p.649-655

2017

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Preparation of visible-light-active Ag and In-doped ZnS thin film photoelectrodes by reactive magnetron co-sputtering

Thin solid films, 2007-07, Vol.515 (20), p.7935-7944

2007

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Electrochemical performance and low discharge cut-off voltage behavior of ruthenium doped Li4Ti5O12 with improved energy density

Electrochimica acta, 2012-02, Vol.63, p.9-15

2012

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Synthesis of entanglement structure in nanosized Li4Ti5O12/multi-walled carbon nanotubes composite anode material for Li-ion batteries by ball-milling-assisted solid-state reaction

Journal of power sources, 2012-01, Vol.198, p.294-297

2012

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Preparation of Sn-Coated Mesophase Graphite Powders by Carbothermal Reduction

Key engineering materials, 2008-01, Vol.373-374, p.738-741

2008

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Preparation and characterization of Ruthenium doped Li₄Ti₅O₁₂ anode material for the enhancement of rate capability and cyclic stability

Materials letters, 2011-08, Vol.65 (15-16), p.2502-2505

2011

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Synthesis of entanglement structure in nanosized Li 4Ti 5O 12/multi-walled carbon nanotubes composite anode material for Li-ion batteries by ball-milling-assisted solid-state reaction

Journal of power sources, 2012, Vol.198, p.294-297

2012

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3D TCAD Simulation for CMOS Nanoeletronic Devices

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure

Hybrid P-Channel/N-Substrate Poly-Si Nanosheet Junctionless Field-Effect Transistors With Trench and Gate-All-Around Structure

Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis

Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length

Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory

A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

Improved capacity and rate capability of Ru-doped and carbon-coated Li4Ti5O12 anode material

High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device

Electroless-plated tin compounds on carbonaceous mixture as anode for lithium-ion battery

Synthesis of confinement structure of Sn/C-C (MWCNTs) composite anode materials for lithium ion battery by carbothermal reduction

Band-to-Band Hot Hole Erase Mechanism of p-Channel Junctionless Silicon Nanowire Nonvolatile Memory

Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Preparation of visible-light-active Ag and In-doped ZnS thin film photoelectrodes by reactive magnetron co-sputtering

Electrochemical performance and low discharge cut-off voltage behavior of ruthenium doped Li4Ti5O12 with improved energy density

Synthesis of entanglement structure in nanosized Li4Ti5O12/multi-walled carbon nanotubes composite anode material for Li-ion batteries by ball-milling-assisted solid-state reaction

Preparation of Sn-Coated Mesophase Graphite Powders by Carbothermal Reduction

Preparation and characterization of Ruthenium doped Li₄Ti₅O₁₂ anode material for the enhancement of rate capability and cyclic stability

Synthesis of entanglement structure in nanosized Li 4Ti 5O 12/multi-walled carbon nanotubes composite anode material for Li-ion batteries by ball-milling-assisted solid-state reaction

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