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Metal-Based Nanoparticles for Cancer Metalloimmunotherapy

Pharmaceutics, 2023-07, Vol.15 (7), p.2003

2023

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The Effectiveness and Safety of Yi Shen Juan Bi Pill on Rheumatoid Arthritis: a Protocol for Systematic Review and/or Meta-Analysis

Journal of Acupuncture & Meridian Studies, 2024, 17(4), 90, pp.116-122

2024

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Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide

Applied physics letters, 2012-02, Vol.100 (8), p.082112-082112-4

2012

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Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3409-3413

2007

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Efficacy and safety evaluation of adjuvant auricular acupuncture for smoking cessation: A study protocol of randomized, assessor-blinded, pragmatic pilot trial

Medicine (Baltimore), 2022-10, Vol.101 (43), p.e31456

2022

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Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Smad3 Regulates Rho Signaling via NET1 in the Transforming Growth Factor-β-induced Epithelial-Mesenchymal Transition of Human Retinal Pigment Epithelial Cells

The Journal of biological chemistry, 2010-08, Vol.285 (34), p.26618-26627

2010

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Systemic Analgesic Effects of Electroacupuncture in Healthy Individuals: Thermal Threshhold, Acupuncture Sensation Intensity and De-qi on Quantitative Sensory Test

Alternative therapies in health and medicine, 2023-03, Vol.29 (2), p.50

2023

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Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage

Journal of the Korean Physical Society, 2013, 62(9), , pp.1312-1316

2013

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Characterization of a trehalose-degrading enzyme from the hyperthermophilic archaeon Sulfolobus acidocaldarius

Journal of bioscience and bioengineering, 2016-07, Vol.122 (1), p.47-51

2016

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A survey on the clinical practice of rheumatoid arthritis management by Korean medicine doctors

European journal of integrative medicine, 2023-02, Vol.58, p.102227, Article 102227

2023

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A new atherosclerotic lesion probe based on hydrophobically modified chitosan nanoparticles functionalized by the atherosclerotic plaque targeted peptides

Journal of controlled release, 2008-06, Vol.128 (3), p.217-223

2008

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Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Japanese Journal of Applied Physics, 2017-12, Vol.56 (12), p.120305

2017

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Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)

Journal of science. Advanced materials and devices, 2024-09, Vol.9 (3), p.100765, Article 100765

2024

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Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH

Journal of the Korean Physical Society, 2016, 69(11), , pp.1677-1682

2016

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Pre-processing Faded Measurements for Bearing-and-Frequency Target Motion Analysis

International Journal of Control, 2008, Automation, and Systems, 6(3), , pp.424-433

2008

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Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature

Applied surface science, 2013-11, Vol.285, p.795-804

2013

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Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Thin solid films, 2014-11, Vol.570, p.138-149

2014

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Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

Journal of Electrical Engineering & Technology, 2018, 13(1), , pp.387-392

2018

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Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

Journal of the Korean Physical Society, 2016, 68(6), , pp.810-814

2016

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Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Applied physics letters, 2010-03, Vol.96 (12)

2010

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Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Materials science in semiconductor processing, 2011-03, Vol.14 (1), p.13-17

2011

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Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer

Applied physics letters, 2006-10, Vol.89 (15)

2006

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Fabrication and characterization of 4H-SiC planar MESFETs

Microelectronic engineering, 2006, Vol.83 (1), p.160-164

2006

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Nanocarriers for cancer nano-immunotherapy

Drug delivery and translational research, 2023-07, Vol.13 (7), p.1936-1954

2023

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Metal-Based Nanoparticles for Cancer Metalloimmunotherapy

The Effectiveness and Safety of Yi Shen Juan Bi Pill on Rheumatoid Arthritis: a Protocol for Systematic Review and/or Meta-Analysis

Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide

Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC

Efficacy and safety evaluation of adjuvant auricular acupuncture for smoking cessation: A study protocol of randomized, assessor-blinded, pragmatic pilot trial

Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide

Smad3 Regulates Rho Signaling via NET1 in the Transforming Growth Factor-β-induced Epithelial-Mesenchymal Transition of Human Retinal Pigment Epithelial Cells

Systemic Analgesic Effects of Electroacupuncture in Healthy Individuals: Thermal Threshhold, Acupuncture Sensation Intensity and De-qi on Quantitative Sensory Test

Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage

Characterization of a trehalose-degrading enzyme from the hyperthermophilic archaeon Sulfolobus acidocaldarius

A survey on the clinical practice of rheumatoid arthritis management by Korean medicine doctors

A new atherosclerotic lesion probe based on hydrophobically modified chitosan nanoparticles functionalized by the atherosclerotic plaque targeted peptides

Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)

Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH

Pre-processing Faded Measurements for Bearing-and-Frequency Target Motion Analysis

Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature

Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer

Fabrication and characterization of 4H-SiC planar MESFETs

Nanocarriers for cancer nano-immunotherapy

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