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Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

IEEE electron device letters, 2011-11, Vol.32 (11), p.1516-1518

2011

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IEEE_Xplore

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

IEEE photonics technology letters, 2006-06, Vol.18 (12), p.1323-1325

2006

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IEEE_Xplore

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I/I Ratio Near \hbox

IEEE electron device letters, 2012-06, Vol.33 (6), p.782-784

2012

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IEEE_Xplore

Ultra low background InGaAs epi-layer on InP for PIN applications by production MBE

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.48-51

2004

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IEEE_Xplore

Modulation-doped In0.48Al0.52P/In0.2Ga0.8As field-effect transistors

Applied physics letters, 1993-03, Vol.62 (10), p.1105-1107

1993

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InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]

IEEE electron device letters, 2012-06, Vol.33 (6), p.782

2012

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InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I_ON/I_OFF Ratio Near {10}6

IEEE electron device letters, 2012-06, Vol.33 (6), p.782-784

2012

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High temperature performance of Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMTs with WSix gates

Solid-state electronics, 1995-02, Vol.38 (2), p.457-459

1995

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InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106

IEEE electron device letters, 2012, Vol.33 (6), p.782-784

2012

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Fe implantation in In0.53Ga0.47As/InP

Journal of applied physics, 1989-01, Vol.65 (2), p.481-485

1989

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Al sub(x)Ga sub(1-x)) sub(0.5)In sub(0.5)P /In sub(0.15)Ga sub(0.85)As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906

2001

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(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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IEEE_Xplore

(Al)x)Ga)1-x)))0.5)In)0.5)P/In)0.15)Ga)0.85)As (x=0, 0. 3, 1. 0) heterostructuredoped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2906-2910

2001

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(Al sub(x)Ga sub(1-x)) sub(0.5 )In sub(0.5)P/In sub(0.15)Ga sub(0.85)As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

IEEE transactions on electron devices, 2001-01, Vol.48 (12)

2001

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Electronic and Photonic Device Applications of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P Grown by Gas Source Molecular Beam Epitaxy

MRS proceedings, 1994, Vol.340, Article 71

Kuo, Jenn-Ming

1994

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In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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IEEE_Xplore

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

Molecular Beam Epitaxy, 2018

2018

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In sub(0.5)(Al sub(x)Ga sub(1-x)) sub(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-01, Vol.47 (8)

1999

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High temperature performance of pseudomorphic HEMTs with WSix gates

Solid-state electronics, 1995-02, Vol.38 (2), p.457-459

1995

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High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

Solid-state electronics, 1995, Vol.38 (2), p.457-459

1995

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A NOVEL PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR UTILIZING MOLECULAR BEAM EPITAXIALLY GROWN GALLIUM(0.47-U) INDIUM(0.53+U)ARSENIC / ALUMINUM(0.48+U)INDIUM(0.52-U)ARSENIC HETEROSTRUCTURES

KUO, JENN-MING

1987

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Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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IEEE_Xplore

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Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I/I Ratio Near \hbox

Ultra low background InGaAs epi-layer on InP for PIN applications by production MBE

Modulation-doped In0.48Al0.52P/In0.2Ga0.8As field-effect transistors

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and [Formula Omitted] Ratio Near [Formula Omitted]

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and I_ON/I_OFF Ratio Near {10}6

High temperature performance of Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMTs with WSix gates

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 106

Fe implantation in In0.53Ga0.47As/InP

Al sub(x)Ga sub(1-x)) sub(0.5)In sub(0.5)P /In sub(0.15)Ga sub(0.85)As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

(Al)x)Ga)1-x)))0.5)In)0.5)P/In)0.15)Ga)0.85)As (x=0, 0. 3, 1. 0) heterostructuredoped-channel FETs for microwave power applications

(Al sub(x)Ga sub(1-x)) sub(0.5 )In sub(0.5)P/In sub(0.15)Ga sub(0.85)As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications

Electronic and Photonic Device Applications of In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P Grown by Gas Source Molecular Beam Epitaxy

In(0.5)(Al(x)Ga(1-x))(0.5)P HEMT's for high-efficiency low-voltage power amplifiers - Design, fabrication, and device results

In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

In(0.5)(Al(x)Ga(1-x))(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

In sub(0.5)(Al sub(x)Ga sub(1-x)) sub(0.5) HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

High temperature performance of pseudomorphic HEMTs with WSix gates

High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

A NOVEL PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR UTILIZING MOLECULAR BEAM EPITAXIALLY GROWN GALLIUM(0.47-U) INDIUM(0.53+U)ARSENIC / ALUMINUM(0.48+U)INDIUM(0.52-U)ARSENIC HETEROSTRUCTURES

Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions

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