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Electronic model for self-assembled hybrid organic/perovskite semiconductors: Reverse band edge electronic states ordering and spin-orbit coupling

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (20), Article 205301

2012

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Microscopic electronic wave function and interactions between quasiparticles in empirical tight-binding theory

Physical review. B, Condensed matter and materials physics, 2015-01, Vol.91 (4), Article 045118

2015

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Quantum tailoring of electronic properties in covalently functionalized graphene: application to ammonia gas detection

RSC advances, 2022-12, Vol.12 (55), p.362-3611

2022

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Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Applied physics letters, 2010-07, Vol.97 (4), p.041910-041910-3

2010

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Theoretical study of optical properties of anti phase domains in GaP

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Potential‐inserted quantum well design for quantum cascade terahertz lasers

Physica status solidi. PSS-RRL. Rapid research letters, 2017-01, Vol.11 (1), p.np-n/a

2017

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Vibrational properties of 2H-PbI2 semiconductors studied via Density Functional Theory calculations

Thin solid films, 2013-08, Vol.541, p.9-11

2013

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First-principles density functional theory study of strained wurtzite InP and InAs

Journal of physics. D, Applied physics, 2013-12, Vol.46 (50), p.505106-4

2013

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Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Solid state communications, 2016-06, Vol.236, p.7-11

2016

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STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states

Physical review letters, 2008-11, Vol.101 (19), p.196801-196801, Article 196801

2008

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Tight-binding calculations of image-charge effects in colloidal nanoscale platelets of CdSe

Physical review. B, Condensed matter and materials physics, 2014-01, Vol.89 (3), Article 035307

2014

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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

Journal of experimental and theoretical physics, 2015-08, Vol.121 (2), p.246-249

2015

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Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach

Applied physics letters, 2012-02, Vol.100 (6), p.062403-062403-3

2012

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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Thin solid films, 2013-08, Vol.541, p.87-91

2013

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Optical properties of ultrathin InAs quantum-well-heterostructures

Applied physics letters, 2012-07, Vol.101 (1)

2012

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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Physical review. B, 2016-08, Vol.94 (7), Article 075445

2016

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Spin structure of electron subbands in (110)-grown quantum wells

AIP Conference Proceedings, 2013, Vol.1566 (1), p.370

2013

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Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

AIP Conference Proceedings, 2013, Vol.1566 (1), p.465

2013

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Intrinsic interface states in InAs-AlSb heterostructures

Journal of physics. Condensed matter, 2016-02, Vol.28 (4), p.045001-045001

2016

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Full band approach to tunneling in MOS structures

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.741-748

2004

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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Journal of applied physics, 2013-03, Vol.113 (12)

2013

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Non-linear electro-elastic coupling in non-centrosymmetric materials

Journal of physics. Conference series, 2012, Vol.367 (1), p.12005-6

2012

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Comment on "Spin-induced forbidden evanescent states in III-V semiconductors"

Physical review letters, 2006-09, Vol.97 (10), p.109701; discussion 109702-109701; discussion 109702, Article 109701

2006

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Transferable tight-binding parametrization for the group-III nitrides

Applied physics letters, 2002-12, Vol.81 (25), p.4838-4840

2002

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Electronic model for self-assembled hybrid organic/perovskite semiconductors: Reverse band edge electronic states ordering and spin-orbit coupling

Microscopic electronic wave function and interactions between quasiparticles in empirical tight-binding theory

Quantum tailoring of electronic properties in covalently functionalized graphene: application to ammonia gas detection

Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Theoretical study of optical properties of anti phase domains in GaP

Potential‐inserted quantum well design for quantum cascade terahertz lasers

Vibrational properties of 2H-PbI2 semiconductors studied via Density Functional Theory calculations

First-principles density functional theory study of strained wurtzite InP and InAs

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states

Tight-binding calculations of image-charge effects in colloidal nanoscale platelets of CdSe

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Optical properties of ultrathin InAs quantum-well-heterostructures

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Spin structure of electron subbands in (110)-grown quantum wells

Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

Intrinsic interface states in InAs-AlSb heterostructures

Full band approach to tunneling in MOS structures

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Non-linear electro-elastic coupling in non-centrosymmetric materials

Comment on "Spin-induced forbidden evanescent states in III-V semiconductors"

Transferable tight-binding parametrization for the group-III nitrides

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