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Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p‑Type Transparent Conducting CuBr Thin Films

Journal of physical chemistry. C, 2014-10, Vol.118 (40), p.23226-23232

2014

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An O2+ probe energy study for boron quantification in Si1−xGex (0≤x≤1) using secondary ion mass spectrometry

Applied surface science, 2016-12, Vol.390, p.778-783

Morris, Richard J.H.

2016

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An O2+ probe energy study for boron quantification in Si1−Ge (0 ≤x≤ 1) using secondary ion mass spectrometry

Applied surface science, 2016-12, Vol.390, p.778-783

Morris, Richard J.H.

2016

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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

Ultramicroscopy, 2024-12, Vol.266, p.114034, Article 114034

2024

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Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN

Ultramicroscopy, 2022-11, Vol.241, p.113592-113592, Article 113592

2022

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Elastic backscattering during boron implantation in Si1-Ge

Vacuum, 2024-01, Vol.219, p.112740, Article 112740

2024

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Elastic backscattering during boron implantation in Si1-xGex

Vacuum, 2024-01, Vol.219

2024

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Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Journal of applied physics, 2022-08, Vol.132 (7)

2022

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Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification

Ultramicroscopy, 2019-11, Vol.206, p.112813-112813, Article 112813

2019

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Non-uniform Gd distribution and magnetization profiles within GdCoFe alloy thin films

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Ultramicroscopy, 2020-03, Vol.210, p.112918-112918, Article 112918

2020

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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Exploiting energy sequencing of low energy SIMS to determine intrinsic chemical profiles with sub-nm precision

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

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Toward accurate composition analysis of GaN and AlGaN using atom probe tomography

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

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Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media

Applied surface science, 2014, Vol.288, p.423-429

2014

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Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures

Ultramicroscopy, 2018-03, Vol.186, p.1-8

2018

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Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

Journal of the American Society for Mass Spectrometry, 2016-10, Vol.27 (10), p.1694-1702

2016

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Depth Profiling and Melting of Nanoparticles in Secondary Ion Mass Spectrometry (SIMS)

Journal of physical chemistry. C, 2013-08, Vol.117 (31), p.16042-16052

2013

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Ion yields and erosion rates for Si1−xGex(≤x≤1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants

Physical review letters, 2012-12, Vol.109 (24), p.247605-247605, Article 247605

2012

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Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Applied physics letters, 2014-03, Vol.104 (13)

2014

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A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range

Applied physics letters, 2012-08, Vol.101 (6), p.64107

2012

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Ultra high hole mobilities in a pure strained Ge quantum well

Thin solid films, 2014-04, Vol.557, p.329-333

2014

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Diffusion of boron in germanium at 800–900°C

Journal of applied physics, 2004-08, Vol.96 (3), p.1376-1380

2004

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Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p‑Type Transparent Conducting CuBr Thin Films

An O2+ probe energy study for boron quantification in Si1−xGex (0≤x≤1) using secondary ion mass spectrometry

An O2+ probe energy study for boron quantification in Si1−Ge (0 ≤x≤ 1) using secondary ion mass spectrometry

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN

Elastic backscattering during boron implantation in Si1-Ge

Elastic backscattering during boron implantation in Si1-xGex

Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification

Non-uniform Gd distribution and magnetization profiles within GdCoFe alloy thin films

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Exploiting energy sequencing of low energy SIMS to determine intrinsic chemical profiles with sub-nm precision

Toward accurate composition analysis of GaN and AlGaN using atom probe tomography

Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media

Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures

Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

Depth Profiling and Melting of Nanoparticles in Secondary Ion Mass Spectrometry (SIMS)

Ion yields and erosion rates for Si1−xGex(≤x≤1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range

Ultra high hole mobilities in a pure strained Ge quantum well

Diffusion of boron in germanium at 800–900°C

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