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Dataset on safety and protective efficacy studies of COVID-19 vaccine candidates based on structurally modified plant virus in female hamsters

Data in brief, 2023-06, Vol.48, p.109158-109158, Article 109158

2023

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Temperature dependence of the current gain in power 4H-SiC NPN BJTs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1245-1249

2006

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On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.100-104

Ivanov, P. A.

2018

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Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC [p.sup.+]-i-[n.sup.+] Diode

Technical physics, 2018-06, Vol.63 (6), p.928

2018

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Internal Initiation of Translation Directed by the 5′-Untranslated Region of the Tobamovirus Subgenomic RNA I2

Virology (New York, N.Y.), 1999-10, Vol.263 (1), p.139-154

1999

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First evidence of virus-like particles in the bacterial symbionts of Bryozoa

Scientific reports, 2021-01, Vol.11 (1), p.4-4, Article 4

2021

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Complexes Formed via Bioconjugation of Genetically Modified TMV Particles with Conserved Influenza Antigen: Synthesis and Characterization

Biochemistry (Moscow), 2020-02, Vol.85 (2), p.224-233

2020

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Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

Technical physics, 2018, Vol.63 (1), p.86-89

2018

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High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

Technical physics, 2015-06, Vol.60 (6), p.897-902

2015

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Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

Technical physics, 2016-02, Vol.61 (2), p.240-243

2016

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Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC [p.sup.+]-[n.sup.-]-[n.sup.+] diodes at low temperatures

Semiconductors (Woodbury, N.Y.), 2015-07, p.976

2015

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Electric-field dependence of electron drift velocity in 4H–SiC

Solid-state electronics, 2016-09, Vol.123, p.15-18

2016

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Current-voltage characteristics of high-voltage 4H-SiC [p.sup.+]-[n.sub.0]-[n.sup.+] diodes in the avalanche breakdown mode

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.374

2017

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Drift mobility of electrons in AlGaN/GaN MOSHFET

Electronics letters, 2001-11, Vol.37 (24), p.1479-1481

2001

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Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.883-887

2016

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SIGNIFICANCE OF THE COMPUTER TOMOGRAPHY IN ASSESSING THE DYNAMICS OF DESTRUCTIVE PANCREATITIS

Russian Electronic Journal of Radiology, 2019, Vol.9 (1), p.269-274

2019

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Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1194-1199

2017

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Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.920-923

2016

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Osteogenic and angiogenic properties of heparin as a system of biomolecule delivery for bone bioengineering: a brief critical review

Biomeditsinskaia khimiia, 2020-11, Vol.66 (6), p.431

2020

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Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.656-661

2016

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Subnanosecond 4H-SiC diode current breakers

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.528-531

2012

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State Severity Assessment in Patients with Obstructive Jaundice using PMGMU2018h Scale Adapted to the Russian Medical and Economic Standards

Sovremennye tekhnologii v medit͡s︡ine, 2020-01, Vol.12 (3), p.77-81

2020

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Low-temperature current-voltage characteristics of 4H-SiC [p.sup.+]-p-[n.sup.+] diodes: effect of impurity breakdown in the p-type base

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.532

2012

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Dynamic characteristics of 4H-SiC drift step recovery diodes

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1511-1515

2015

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Chimeric particles of tobacco mosaic virus as a platform for the development of next-generation nanovaccines

Nanotechnologies in Russia, 2016-03, Vol.11 (3-4), p.227-236

2016

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Dataset on safety and protective efficacy studies of COVID-19 vaccine candidates based on structurally modified plant virus in female hamsters

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel

Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC [p.sup.+]-i-[n.sup.+] Diode

Internal Initiation of Translation Directed by the 5′-Untranslated Region of the Tobamovirus Subgenomic RNA I2

First evidence of virus-like particles in the bacterial symbionts of Bryozoa

Complexes Formed via Bioconjugation of Genetically Modified TMV Particles with Conserved Influenza Antigen: Synthesis and Characterization

Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation

Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC [p.sup.+]-[n.sup.-]-[n.sup.+] diodes at low temperatures

Electric-field dependence of electron drift velocity in 4H–SiC

Current-voltage characteristics of high-voltage 4H-SiC [p.sup.+]-[n.sub.0]-[n.sup.+] diodes in the avalanche breakdown mode

Drift mobility of electrons in AlGaN/GaN MOSHFET

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

SIGNIFICANCE OF THE COMPUTER TOMOGRAPHY IN ASSESSING THE DYNAMICS OF DESTRUCTIVE PANCREATITIS

Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

Osteogenic and angiogenic properties of heparin as a system of biomolecule delivery for bone bioengineering: a brief critical review

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Subnanosecond 4H-SiC diode current breakers

State Severity Assessment in Patients with Obstructive Jaundice using PMGMU2018h Scale Adapted to the Russian Medical and Economic Standards

Low-temperature current-voltage characteristics of 4H-SiC [p.sup.+]-p-[n.sup.+] diodes: effect of impurity breakdown in the p-type base

Dynamic characteristics of 4H-SiC drift step recovery diodes

Chimeric particles of tobacco mosaic virus as a platform for the development of next-generation nanovaccines

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