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Developing silicon carbide for quantum spintronics

Applied physics letters, 2020-05, Vol.116 (19)

2020

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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nature communications, 2019-04, Vol.10 (1), p.1954-1954, Article 1954

2019

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Charge state control of the silicon vacancy and divacancy in silicon carbide

Journal of applied physics, 2021-06, Vol.129 (21)

2021

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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Nano letters, 2019-10, Vol.19 (10), p.7173-7180

2019

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Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Journal of applied physics, 2021-08, Vol.130 (6)

2021

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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Applied physics letters, 2019-05, Vol.114 (21)

2019

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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Nature communications, 2023-12, Vol.14 (1), p.8448-8448, Article 8448

2023

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Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

New journal of physics, 2020-10, Vol.22 (10), p.103051

2020

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An Optimization Precise Model of Stroke Data to Improve Stroke Prediction

Algorithms, 2023-09, Vol.16 (9), p.417

2023

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Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Journal of physics. Condensed matter, 2019-05, Vol.31 (19), p.195501-195501

2019

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Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

Applied physics letters, 2017-08, Vol.111 (7)

2017

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On the Iterative Methods for the Solution of Three Types of Nonlinear Matrix Equations

Mathematics (Basel), 2023-11, Vol.11 (21), p.4436

2023

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In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Scientific reports, 2017-07, Vol.7 (1), p.5151-8, Article 5151

2017

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Conditions and a computation method of the constrained regulation problem for a class of fractional-order nonlinear continuous-time systems

International journal of applied mathematics and computer science, 2021-03, Vol.31 (1)

2021

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Stable and metastable Si negative-U centers in AlGaN and AlN

Applied physics letters, 2014-10, Vol.105 (16), p.162106

2014

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Constrained State Regulation Problem of Descriptor Fractional-Order Linear Continuous-Time Systems

Fractal and fractional, 2024-05, Vol.8 (5), p.255

2024

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CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Journal of applied physics, 2019-01, Vol.125 (4)

2019

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Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Crystal growth & design, 2015-06, Vol.15 (6), p.2940-2947

2015

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The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films

Advanced materials interfaces, 2024-06, Vol.11 (18), p.n/a

2024

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Understanding Graphene Response to Neutral and Charged Lead Species: Theory and Experiment

Materials, 2018-10, Vol.11 (10), p.2059

2018

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Identification and tunable optical coherent control of transition-metal spins in silicon carbide

npj quantum information, 2018-10, Vol.4 (1), p.1-7, Article 48

2018

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Exhaustive characterization of modified Si vacancies in 4H-SiC

Nanophotonics (Berlin, Germany), 2022-09, Vol.11 (20), p.4565-4580

2022

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Bioactivity Potential of Industrial Sunflower Meal Ethanol-Wash Solute Obtained as Waste from Protein Isolation Process

Applied sciences, 2021-11, Vol.11 (22), p.11007

2021

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Interval Methods with Fifth Order of Convergence for Solving Nonlinear Scalar Equations

Axioms, 2019, Vol.8 (1), p.15

2019

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Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

Applied physics letters, 2024-10, Vol.125 (16)

2024

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Developing silicon carbide for quantum spintronics

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Charge state control of the silicon vacancy and divacancy in silicon carbide

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

An Optimization Precise Model of Stroke Data to Improve Stroke Prediction

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

On the Iterative Methods for the Solution of Three Types of Nonlinear Matrix Equations

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Conditions and a computation method of the constrained regulation problem for a class of fractional-order nonlinear continuous-time systems

Stable and metastable Si negative-U centers in AlGaN and AlN

Constrained State Regulation Problem of Descriptor Fractional-Order Linear Continuous-Time Systems

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films

Understanding Graphene Response to Neutral and Charged Lead Species: Theory and Experiment

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Exhaustive characterization of modified Si vacancies in 4H-SiC

Bioactivity Potential of Industrial Sunflower Meal Ethanol-Wash Solute Obtained as Waste from Protein Isolation Process

Interval Methods with Fifth Order of Convergence for Solving Nonlinear Scalar Equations

Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

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