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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied physics letters, 2013-11, Vol.103 (20)

2013

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Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2735-2741

2016

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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied physics letters, 2022-12, Vol.121 (23)

2022

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Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers

Physica Status Solidi. B: Basic Solid State Physics, 2016-05, Vol.253 (5), p.801-808

2016

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Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology, 2018-07, Vol.29 (39), p.395702-395702

2018

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Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.491-495

2017

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Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals (Basel), 2023-09, Vol.13 (9), p.1309

2023

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Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of applied physics, 2008-11, Vol.104 (9), p.093706-093706-7

2008

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Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts

Applied physics letters, 2007-02, Vol.90 (9)

2007

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Review of technology for normally-off HEMTs with p-GaN gate

Materials science in semiconductor processing, 2018-05, Vol.78, p.96-106

2018

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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

ACS applied electronic materials, 2019-11, Vol.1 (11), p.2342-2354

2019

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Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress

Energies (Basel), 2022-02, Vol.15 (3), p.677

2022

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GaN-on-Si HEMTs for wireless base stations

Materials science in semiconductor processing, 2019-08, Vol.98, p.100-105

2019

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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

e-Prime, 2023-12, Vol.6, p.100338, Article 100338

2023

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Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum, 2016-05, Vol.858, p.1170-1173

2016

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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic engineering, 2018-02, Vol.187-188, p.66-77

2018

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Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

Materials science in semiconductor processing, 2019-07, Vol.97, p.40-43

2019

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Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

Materials science in semiconductor processing, 2018-05, Vol.78, p.127-131

2018

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Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

Materials science in semiconductor processing, 2019-08, Vol.98, p.77-80

2019

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Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2893-2899

2017

Volltextzugriff (PDF)

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Ohmic contacts to Gallium Nitride materials

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts

Review of technology for normally-off HEMTs with p-GaN gate

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress

GaN-on-Si HEMTs for wireless base stations

Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

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