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Recycled plastic aggregate in mortars composition: Effect on physical and mechanical properties

Materials in engineering, 2013-12, Vol.52, p.916-922

2013

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Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Applied physics letters, 2024-01, Vol.124 (1)

2024

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Sr-, Zn- and Cd-exchanged zeolitic materials as water vapor adsorbents for thermal energy storage applications

Applied thermal engineering, 2016-08, Vol.106, p.1217-1224

2016

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Fiber-reinforced lime-based mortars: Effect of zeolite addition

Construction & building materials, 2015-02, Vol.77, p.455-460

2015

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Hemp reinforcement in lightweight geopolymers

Journal of composite materials, 2018-07, Vol.52 (17), p.2313-2320

2018

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Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.669-674

2022

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Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Surface and interface issues in wide band gap semiconductor electronics

Applied surface science, 2010-07, Vol.256 (19), p.5727-5735

2010

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Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

Physica status solidi. A, Applications and materials science, 2017-09, Vol.214 (9), p.1600764-n/a

2017

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Entrapping of Cs and Sr in heat-treated zeolite matrices

Journal of nuclear materials, 2013-04, Vol.435 (1-3), p.196-201

2013

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Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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Temperature dependence of the specific resistance in Ti ∕ Al ∕ Ni ∕ Au contacts on n -type GaN

Journal of applied physics, 2006-12, Vol.100 (12), p.123706-123706-8

2006

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Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600357-n/a

2017

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On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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Nanoscale carrier transport in Ti ∕ Al ∕ Ni ∕ Au Ohmic contacts on AlGaN epilayers grown on Si(111)

Applied physics letters, 2006-07, Vol.89 (2), p.022103-022103-3

2006

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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-8

2023

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Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of applied physics, 2009-07, Vol.106 (2), p.023703-023703-6

2009

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Synthesis of mesoporous materials for carbon dioxide sequestration

Microporous and mesoporous materials, 2005-06, Vol.81 (1), p.139-147

2005

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In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.319-322

2021

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Fibre-reinforced lime-based mortars: A possible resource for ancient masonry restoration

Construction & building materials, 2013-01, Vol.38, p.785-789

2013

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Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-8

2021

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Ion exchange kinetics and thermodynamics of hydrosodalite, a narrow pore zeolite

Journal of porous materials, 2014-10, Vol.21 (5), p.643-651

2014

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Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

IEEE electron device letters, 2024-08, p.1-1

2024

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Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.336-339

2007

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Permanent and safe storage of Ba2+ in hardened phillipsite-rich tuff/cement pastes

Applied clay science, 2005, Vol.28 (1-4), p.167-173

2005

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Recycled plastic aggregate in mortars composition: Effect on physical and mechanical properties

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Sr-, Zn- and Cd-exchanged zeolitic materials as water vapor adsorbents for thermal energy storage applications

Fiber-reinforced lime-based mortars: Effect of zeolite addition

Hemp reinforcement in lightweight geopolymers

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

Surface and interface issues in wide band gap semiconductor electronics

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

Entrapping of Cs and Sr in heat-treated zeolite matrices

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

Temperature dependence of the specific resistance in Ti ∕ Al ∕ Ni ∕ Au contacts on n -type GaN

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

Nanoscale carrier transport in Ti ∕ Al ∕ Ni ∕ Au Ohmic contacts on AlGaN epilayers grown on Si(111)

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Synthesis of mesoporous materials for carbon dioxide sequestration

In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs

Fibre-reinforced lime-based mortars: A possible resource for ancient masonry restoration

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

Ion exchange kinetics and thermodynamics of hydrosodalite, a narrow pore zeolite

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Permanent and safe storage of Ba2+ in hardened phillipsite-rich tuff/cement pastes

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