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Idh1 protects murine hepatocytes from endotoxin-induced oxidative stress by regulating the intracellular NADP+/NADPH ratio

Cell death and differentiation, 2015-11, Vol.22 (11), p.1837-1845

2015

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Gene polymorphisms in antioxidant enzymes correlate with the efficacy of androgen-deprivation therapy for prostate cancer with implications of oxidative stress

Annals of oncology, 2017-03, Vol.28 (3), p.569-575

2017

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Mule/Huwe1/Arf-BP1 suppresses Ras-driven tumorigenesis by preventing c-Myc/Miz1-mediated down-regulation of p21 and p15

Genes & development, 2013-05, Vol.27 (10), p.1101-1114

2013

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Octahedral void defects in Czochralski silicon

Journal of crystal growth, 2002-04, Vol.237, p.1773-1778

Itsumi, Manabu

2002

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Idh1 protects murine hepatocytes from endotoxin-induced oxidative stress by regulating the intracellular NADP super(+)/NADPH ratio

Cell death and differentiation, 2015-11, Vol.22 (11), p.1837-1845

2015

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The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon

Journal of applied physics, 1995-11, Vol.78 (10), p.5984-5988

1995

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Analysis of grown-in defects in Czochralski Si

Journal of crystal growth, 2000-03, Vol.210 (1), p.1-6

Itsumi, Manabu

2000

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Substrate defects affecting gate oxide integrity

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.184-190

Itsumi, Manabu

2000

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Octahedral void defects observed in the bulk of Czochralski silicon

Applied physics letters, 1997-03, Vol.70 (10), p.1248-1250

1997

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SiSiO2 interface state recovery from plasma damage by rotating wafers under a flow of deionized water

Applied surface science, 1997-06, Vol.117-118, p.249-252

Itsumi, Manabu

1997

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Stress evaluation of chemical vapor deposited silicon dioxide films

Physica. B, Condensed matter, 2002-11, Vol.324 (1), p.167-172

2002

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The origin of defects in SiO2 thermally grown on Czochralski silicon substrates

Journal of applied physics, 1995-08, Vol.78 (3), p.1940-1943

1995

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Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films

Journal of applied physics, 1998-11, Vol.84 (9), p.5243-5247

1998

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Spectrum analysis and vector representation of SRAM bit failures

IEEE transactions on semiconductor manufacturing, 1995-08, Vol.8 (3), p.365-370

1995

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Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates

Journal of the Electrochemical Society, 1994-09, Vol.141 (9), p.2460-2464

Itsumi, Manabu

1994

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Contamination Determination for Silicon Carbide Cantilever Forks in Diffusion Furnaces

Journal of the Electrochemical Society, 1994-05, Vol.141 (5), p.1304-1308

Itsumi, Manabu

1994

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Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

Journal of applied physics, 1998-08, Vol.84 (3), p.1241-1245

1998

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Characterization of metallic impurities in Si using a recombination-lifetime correlation method

Journal of applied physics, 1997-10, Vol.82 (7), p.3250-3255

1997

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Sensitivity of SrBi2Ta2O9 capacitors to materials and annealing processes in upper electrode formation

Thin solid films, 2002-05, Vol.411 (2), p.274-279

2002

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Method of determining metal contamination by combining p-type Si and n-type Si recombination lifetime measurements

Applied physics letters, 1993-08, Vol.63 (8), p.1095-1097

ITSUMI, M

1993

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Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.812-817

1996

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Si-SiO2 interface state recovery from plasma damage by rotating wafers under a flow of deionized water

Applied surface science, 1997, Vol.117-18, p.249-252

ITSUMI, M

1997

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Octahedral void defects and related circular stains on thermal oxides

Journal of applied physics, 1999-08, Vol.86 (3), p.1322-1325

1999

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Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon

Journal of applied physics, 1999-08, Vol.86 (4), p.2330-2333

1999

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Octahedral void structure observed in grown-in defects in the bulk of standard Czochralski-Si for MOS LSIs

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1781-1785

1997

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Idh1 protects murine hepatocytes from endotoxin-induced oxidative stress by regulating the intracellular NADP+/NADPH ratio

Gene polymorphisms in antioxidant enzymes correlate with the efficacy of androgen-deprivation therapy for prostate cancer with implications of oxidative stress

Mule/Huwe1/Arf-BP1 suppresses Ras-driven tumorigenesis by preventing c-Myc/Miz1-mediated down-regulation of p21 and p15

Octahedral void defects in Czochralski silicon

Idh1 protects murine hepatocytes from endotoxin-induced oxidative stress by regulating the intracellular NADP super(+)/NADPH ratio

The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon

Analysis of grown-in defects in Czochralski Si

Substrate defects affecting gate oxide integrity

Octahedral void defects observed in the bulk of Czochralski silicon

SiSiO2 interface state recovery from plasma damage by rotating wafers under a flow of deionized water

Stress evaluation of chemical vapor deposited silicon dioxide films

The origin of defects in SiO2 thermally grown on Czochralski silicon substrates

Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films

Spectrum analysis and vector representation of SRAM bit failures

Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates

Contamination Determination for Silicon Carbide Cantilever Forks in Diffusion Furnaces

Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

Characterization of metallic impurities in Si using a recombination-lifetime correlation method

Sensitivity of SrBi2Ta2O9 capacitors to materials and annealing processes in upper electrode formation

Method of determining metal contamination by combining p-type Si and n-type Si recombination lifetime measurements

Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits

Si-SiO2 interface state recovery from plasma damage by rotating wafers under a flow of deionized water

Octahedral void defects and related circular stains on thermal oxides

Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon

Octahedral void structure observed in grown-in defects in the bulk of standard Czochralski-Si for MOS LSIs

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