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(0 0 6)-oriented α-Al 2O 3 films prepared in CO 2–H 2 atmosphere by laser chemical vapor deposition using a diode laser

Materials science & engineering. B, Solid-state materials for advanced technology, 2011, Vol.176 (13), p.984-989

2011

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(006)-oriented α-Al2O3 films prepared in CO2–H2 atmosphere by laser chemical vapor deposition using a diode laser

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-08, Vol.176 (13), p.984-989

2011

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A 0.00023 mm² 1.2V 0.48mW 18GHz Passive-Less Digital Wireless Transmitter with On-Chip Antenna in 22nm Bulk CMOS

2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS), 2022, p.1-2

2022

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0.1-15THz generation using BNA (N-benzyl-2-methyl-4-nitroaniline) crystal

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science, 2008, p.1-2

2008

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0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.81-84

1995

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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DE04-04DE04-6

2012

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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139

1996

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A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.661-664

2007

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0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), 2003, p.171-172

2003

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A 0.2-0.5 THz heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008, p.1-2

2008

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A 0.2 - 0.5 THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

Applied physics letters, 2008-09, Vol.93 (9), p.093508-093508-3

2008

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A 0.2–0.5THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

Applied physics letters, 2008-09, Vol.93 (9)

2008

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0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

Digest of technical papers - Symposium on VLSI Technology, 1996-01, p.132-133

1996

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0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

1996 Symposium on VLSI Technology. Digest of Technical Papers, 1996, p.132-133

1996

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0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

IEEE electron device letters, 1989-05, Vol.10, p.186-188

1989

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A 0.25-/spl mu/m CMOS 0.9-V 100-MHz DSP core

IEEE journal of solid-state circuits, 1997-01, Vol.32 (1), p.52-61

1997

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A 0.25-μm CMOS 0.9-V 100-MHz DSP core

IEEE journal of solid-state circuits, 1997-01, Vol.32 (1), p.52-61

1997

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0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

IEEE electron device letters, 1989-05, Vol.10 (5), p.186-188

1989

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A 0.5- mu m EEPROM cell using poly-Si TFT technology

IEEE transactions on electron devices, 1993-11, Vol.40 (11), p.2126

1993

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A 0.5-/spl mu/m EEPROM cell using poly-si TFT technology

51st Annual Device Research Conference, 1993, p.99-100

1993

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A 0.5-V 1.56-mW 5.5-GHz RF transceiver IC module with J-shaped folded monopole antenna

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.1218-1221

2015

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(0 0 6)-oriented α-Al 2O 3 films prepared in CO 2–H 2 atmosphere by laser chemical vapor deposition using a diode laser

(006)-oriented α-Al2O3 films prepared in CO2–H2 atmosphere by laser chemical vapor deposition using a diode laser

A 0.00023 mm² 1.2V 0.48mW 18GHz Passive-Less Digital Wireless Transmitter with On-Chip Antenna in 22nm Bulk CMOS

0.1-15THz generation using BNA (N-benzyl-2-methyl-4-nitroaniline) crystal

0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide Semiconductor

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

A 0.13μm CMOS 5GHz Fully Integrated 2x3 MIMO Transceiver IC with over 40dB Isolation

0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

A 0.2-0.5 THz heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

A 0.2 - 0.5 THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

A 0.2–0.5THz single-band heterodyne receiver based on a photonic local oscillator and a superconductor-insulator-superconductor mixer

0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

A 0.25-/spl mu/m CMOS 0.9-V 100-MHz DSP core

A 0.25-μm CMOS 0.9-V 100-MHz DSP core

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

A 0.5- mu m EEPROM cell using poly-Si TFT technology

A 0.5-/spl mu/m EEPROM cell using poly-si TFT technology

A 0.5-V 1.56-mW 5.5-GHz RF transceiver IC module with J-shaped folded monopole antenna

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