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Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device

IEEE transactions on magnetics, 2012-07, Vol.48 (7), p.2152-2157

2012

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IEEE_Xplore

Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Journal of applied physics, 2010-05, Vol.107 (10), p.103912-103912-9

2010

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Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.028005-028005-2

2012

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Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.28005

2012

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Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7R), p.73002

2011

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Magnetic Tunnel Junction (MTJ) Patterning for Magnetic Random Access Memory (MRAM) Process Applications

Japanese Journal of Applied Physics, 2003-05, Vol.42 (Part 2, No. 5B), p.L499-L501

2003

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Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Journal of applied physics, 2006-04, Vol.99 (8)

2006

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Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Journal of applied physics, 2010-12, Vol.108 (11), p.113914-113914-4

2010

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Soft magnetism of high-nitrogen-concentration FeTaN films

Journal of applied physics, 1991-04, Vol.69 (8), p.5616-5618

1991

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Characteristics of Quick Lime by Various Calcining Methods

Tetsu-to-Hagane, 2009/03/01, Vol.95(3), pp.188-198

2009

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Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

IEEE transactions on magnetics, 2011-10, Vol.47 (10), p.3089-3091

2011

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IEEE_Xplore

MRAM Cell Technology for Over 500-MHz SoC

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.830-838

2007

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IEEE_Xplore

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2539-2542

2008

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IEEE_Xplore

Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3776-3779

2009

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IEEE_Xplore

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2535-2538

2008

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IEEE_Xplore

FeN phase generation effects for high moment FeTaN films

Journal of applied physics, 1993-05, Vol.73 (10), p.6576-6578

1993

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Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7), p.073002-073002-3

2011

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Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

IEEE transactions on magnetics, 2007-08, Vol.43 (8), p.3512-3516

2007

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IEEE_Xplore

A 16-Mb Toggle MRAM With Burst Modes

IEEE journal of solid-state circuits, 2007-11, Vol.42 (11), p.2378-2385

2007

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IEEE_Xplore

Mechanism of Dust Generation in a Converter with Minimum Slag

ISIJ International, 1989/04/15, Vol.29(4), pp.291-299

1989

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Enhancement of writing margin for low switching toggle magneticrandom access memories using multilayer synthetic antiferromagnetic structures

Journal of applied physics, 2006-04, Vol.99 (8), p.08N905-08N905-3

2006

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Large Exchange Coupling in Synthetic Antiferromagnet With Ultrathin Seed Layer

IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2636-2638

2006

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IEEE_Xplore

生石灰の特性に及ぼす焼成条件等の影響

鉄と鋼, 2009/03/01, Vol.95(3), pp.188-198

2009

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A 16-Mb toggle MRAM with burst modes : The 2006 asian solid-state circuits conference (A-SSCC'06)

IEEE journal of solid-state circuits, 2007, Vol.42 (11), p.2378-2385

2007

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Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7R), p.4121

2007

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Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device

Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire

Effect of Current on Domain Wall Depinning Field in Co/Ni Nanowire

Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires

Magnetic Tunnel Junction (MTJ) Patterning for Magnetic Random Access Memory (MRAM) Process Applications

Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Soft magnetism of high-nitrogen-concentration FeTaN films

Characteristics of Quick Lime by Various Calcining Methods

Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

MRAM Cell Technology for Over 500-MHz SoC

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

FeN phase generation effects for high moment FeTaN films

Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires

Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

A 16-Mb Toggle MRAM With Burst Modes

Mechanism of Dust Generation in a Converter with Minimum Slag

Enhancement of writing margin for low switching toggle magneticrandom access memories using multilayer synthetic antiferromagnetic structures

Large Exchange Coupling in Synthetic Antiferromagnet With Ultrathin Seed Layer

生石灰の特性に及ぼす焼成条件等の影響

A 16-Mb toggle MRAM with burst modes : The 2006 asian solid-state circuits conference (A-SSCC'06)

Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory

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