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Electrical control of the ferromagnetic phase transition in cobalt at room temperature

Nature materials, 2011-10, Vol.10 (11), p.853-856

2011

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Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire

Nature materials, 2011-03, Vol.10 (3), p.194-197

2011

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Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization

Nature communications, 2012-06, Vol.3 (1), p.888-888, Article 888

2012

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Electrical control of Curie temperature in cobalt using an ionic liquid film

Applied physics letters, 2012-03, Vol.100 (12), p.122402-122402-3

2012

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Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

Applied physics letters, 2011-04, Vol.98 (14), p.142505-142505-3

2011

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Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy

Journal of applied physics, 2008-04, Vol.103 (7), p.07E718-07E718-3

2008

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Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown

Nature nanotechnology, 2012-10, Vol.7 (10), p.635-639

2012

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Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires

Applied physics letters, 2009-12, Vol.95 (23), p.232504-232504-3

2009

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Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

Applied physics letters, 2012-05, Vol.100 (20), p.202407-202407-3

2012

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Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co/Ni nanowire

Applied physics letters, 2011-05, Vol.98 (19)

2011

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Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3776-3779

2009

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Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

Journal of applied physics, 2012-04, Vol.111 (7), p.07C903-07C903-3

2012

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MRAM Cell Technology for Over 500-MHz SoC

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.830-838

2007

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IEEE_Xplore

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2539-2542

2008

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IEEE_Xplore

Low write-current magnetic random access memory cell with anisotropy-varied free layers

Journal of applied physics, 2008-12, Vol.104 (11), p.113901-113901-4

2008

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Attenuation of propagating spin wave induced by layered nanostructures

Applied physics letters, 2012-03, Vol.100 (13), p.132411-132411-3

2012

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Domain wall pinning by a stray field from NiFe on a Co/Ni nanowire

Journal of the Korean Physical Society, 2013, 63(3), , pp.608-611

2013

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Reduction of critical current density for domain wall motion in U-shaped magnetic patterns

Journal of applied physics, 2008-04, Vol.103 (7)

2008

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Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

Journal of applied physics, 2008-04, Vol.103 (7)

2008

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Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells

Journal of applied physics, 2009-04, Vol.105 (7), p.07C921-07C921-3

2009

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Analysis for toggling magnetic random access memories with low writing field using four ferromagnetic layers for free layer stack

Journal of applied physics, 2007-01, Vol.101 (2), p.023906-023906-5

2007

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Alternatively spliced isoform of P-selectin is present in vivo as a soluble molecule

The Journal of biological chemistry, 1994-09, Vol.269 (38), p.23708-23715

1994

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Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2535-2538

2008

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IEEE_Xplore

Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Journal of applied physics, 2006-04, Vol.99 (8), p.08R702-08R702-3

2006

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Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

IEEE transactions on magnetics, 2007-08, Vol.43 (8), p.3512-3516

2007

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IEEE_Xplore

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Electrical control of the ferromagnetic phase transition in cobalt at room temperature

Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire

Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization

Electrical control of Curie temperature in cobalt using an ionic liquid film

Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy

Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown

Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires

Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co/Ni nanowire

Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

MRAM Cell Technology for Over 500-MHz SoC

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

Low write-current magnetic random access memory cell with anisotropy-varied free layers

Attenuation of propagating spin wave induced by layered nanostructures

Domain wall pinning by a stray field from NiFe on a Co/Ni nanowire

Reduction of critical current density for domain wall motion in U-shaped magnetic patterns

Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells

Analysis for toggling magnetic random access memories with low writing field using four ferromagnetic layers for free layer stack

Alternatively spliced isoform of P-selectin is present in vivo as a soluble molecule

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

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