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Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Reduced leakage current in La and Ni codoped BiFeO3 thin films

Applied physics letters, 2007-09, Vol.91 (11)

2007

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Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films

Journal of applied physics, 2007-11, Vol.102 (9)

2007

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The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films

Journal of physics. D, Applied physics, 2007-05, Vol.40 (9), p.2705-2709

2007

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Enhanced polarization and reduced leakage current in BiFeO3 thin films fabricated by chemical solution deposition

Journal of applied physics, 2006-09, Vol.100 (6)

2006

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Improved multiferroic properties in Sm-doped BiFeO3 thin films deposited using chemical solution deposition method

Journal of applied physics, 2012-05, Vol.111 (10)

2012

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Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

Applied physics letters, 2006-04, Vol.88 (16)

2006

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Impurity substitution effects in BiFeO3 thin films—From a viewpoint of FeRAM applications

Current applied physics, 2012-05, Vol.12 (3), p.603-611

Ishiwara, Hiroshi

2012

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(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3∕Pt∕Ti∕SiO2∕Si structures

Applied physics letters, 2007-06, Vol.90 (24)

2007

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Frequency-dependent electrical properties in Bi(Zn 0.5 Ti 0.5 )O 3 doped Pb(Zr 0.4 Ti 0.6 )O 3 thin film for ferroelectric memory application

Semiconductor science and technology, 2010-03, Vol.25 (3), p.35006

2010

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Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films

Journal of applied physics, 2010-10, Vol.108 (8)

2010

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Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

IEEE electron device letters, 1997-04, Vol.18 (4), p.160-162

1997

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Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Microelectronic engineering, 2010-11, Vol.87 (11), p.2173-2177

2010

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Laser and Ion Beam Modification of Materials: Proceedings of the Symposium U: Material Synthesis and Modification by Ion Beams and Laser Beams of the 3rd IUMRS International Conference on Advanced Materials, Sunshine City, Ikebukuro, Tokyo, Japan, August 31 - September 4, 1993

2013

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Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route

Thin solid films, 2006-02, Vol.497 (1-2), p.90-95

2006

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FREQUENCY-DEPENDENT POLARIZATION IN BiFeO3 THIN FILMS

Integrated ferroelectrics, 2008-01, Vol.98 (1), p.83-89

2008

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Electrical properties of Pt/Bi3.25La0.75Ti3O12/Pt thin film capacitors tailored by cerium doping

Journal of materials research, 2006-04, Vol.21 (4), p.988-994

2006

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Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms

Journal of sol-gel science and technology, 2007-06, Vol.42 (3), p.231-238

2007

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Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films

Solid state communications, 2006-12, Vol.140 (9-10), p.430-434

2006

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Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-04, Vol.161 (1-3), p.130-133

2009

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Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2002-2008

2001

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Current Status of Ferroelectric Random-Access Memory

MRS bulletin, 2004-11, Vol.29 (11), p.823-828

2004

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Improved multiferroic properties in Sm-doped BiFeO 3 thin films deposited using chemical solution deposition method

Journal of applied physics, 2012-05, Vol.111 (10), p.102801-102801-4

2012

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Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated r-plane sapphire substrates

Journal of electroceramics, 2006-07, Vol.16 (4), p.553-556

2006

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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

2nd ed. 2020., 2016

Volltextzugriff (PDF)

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Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Reduced leakage current in La and Ni codoped BiFeO3 thin films

Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films

The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films

Enhanced polarization and reduced leakage current in BiFeO3 thin films fabricated by chemical solution deposition

Improved multiferroic properties in Sm-doped BiFeO3 thin films deposited using chemical solution deposition method

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

Impurity substitution effects in BiFeO3 thin films—From a viewpoint of FeRAM applications

(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3∕Pt∕Ti∕SiO2∕Si structures

Frequency-dependent electrical properties in Bi(Zn 0.5 Ti 0.5 )O 3 doped Pb(Zr 0.4 Ti 0.6 )O 3 thin film for ferroelectric memory application

Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films

Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Laser and Ion Beam Modification of Materials: Proceedings of the Symposium U: Material Synthesis and Modification by Ion Beams and Laser Beams of the 3rd IUMRS International Conference on Advanced Materials, Sunshine City, Ikebukuro, Tokyo, Japan, August 31 - September 4, 1993

Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route

FREQUENCY-DEPENDENT POLARIZATION IN BiFeO3 THIN FILMS

Electrical properties of Pt/Bi3.25La0.75Ti3O12/Pt thin film capacitors tailored by cerium doping

Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms

Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films

Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films

Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

Current Status of Ferroelectric Random-Access Memory

Improved multiferroic properties in Sm-doped BiFeO 3 thin films deposited using chemical solution deposition method

Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated r-plane sapphire substrates

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

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