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Hydrogen interaction with GaN metal–insulator–semiconductor diodes

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2957-2959

Irokawa, Y.

2012

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Electrical activation characteristics of silicon-implanted GaN

Journal of applied physics, 2005-04, Vol.97 (8), p.083505-083505-5

2005

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Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Applied physics letters, 2002-06, Vol.80 (24), p.4555-4557

2002

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MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied physics letters, 2004-04, Vol.84 (15), p.2919-2921

2004

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Inversion behavior in Sc2O3/GaN gated diodes

Applied physics letters, 2002-07, Vol.81 (2), p.373-375

2002

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Hydrogen interaction with GaN metalainsulatorasemiconductor diodes

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2957-2959

Irokawa, Y

2012

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Implantation temperature dependence of Si activation in AlGaN

Applied physics letters, 2006-05, Vol.88 (18), p.182106-182106-3

2006

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Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes

ECS electrochemistry letters, 2014-08, Vol.3 (11), p.B17-B19

Irokawa, Y.

2014

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Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

Journal of the Electrochemical Society, 2002-11, Vol.149 (11), p.G613

2002

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Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Solid-state electronics, 2003-09, Vol.47 (9), p.1533-1538

2003

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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Applied physics letters, 2003-09, Vol.83 (11), p.2271-2273

2003

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Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes

Physica status solidi. C, 2008-07, Vol.5 (9), p.2985-2987

2008

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160-A bulk GaN Schottky diode array

Applied physics letters, 2003-10, Vol.83 (15), p.3192-3194

2003

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Characterization of Al In GaN/GaN Heterointerface by HAADF-STEM and Electron Holography

Microscopy and microanalysis, 2008-08, Vol.14 (S2), p.438-439

2008

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Electrical characteristics of GaN implanted with Si + at elevated temperatures

Applied physics letters, 2005-03, Vol.86 (11), p.112108-112108-3

2005

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Photodegradation of toluene over TiO2-xNx under visible light irradiation

Physical chemistry chemical physics : PCCP, 2006-01, Vol.8 (9), p.1116-1121

2006

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Activation characteristics of ion-implanted Si + in AlGaN

Applied physics letters, 2005-05, Vol.86 (19), p.192102-192102-3

2005

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Hydrogen sensors based on GaN diodes: The sensing mechanism

2012 IEEE Sensors, 2012, p.1-4

Irokawa, Y.

2012

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Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-03, Vol.22 (2), p.710-714

2004

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Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Applied physics letters, 2003-12, Vol.83 (24), p.4987-4989

2003

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Design of junction termination structures for GaN Schottky power rectifiers

Solid-state electronics, 2003-06, Vol.47 (6), p.975-979

2003

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Edge termination design and simulation for bulk GaN rectifiers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-09, Vol.20 (5), p.2169-2172

2002

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Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure

Japanese Journal of Applied Physics, 2001, Vol.40 (10R), p.5907-5908

2001

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Si + ion implanted MPS bulk GaN diodes

Solid-state electronics, 2004-05, Vol.48 (5), p.827-830

2004

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Charge pumping in Sc2O3∕GaN gated mos diodes

Electronics letters, 2002-08, Vol.38 (16), p.920

2002

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Hydrogen interaction with GaN metal–insulator–semiconductor diodes

Electrical activation characteristics of silicon-implanted GaN

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Inversion behavior in Sc2O3/GaN gated diodes

Hydrogen interaction with GaN metalainsulatorasemiconductor diodes

Implantation temperature dependence of Si activation in AlGaN

Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes

Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes

160-A bulk GaN Schottky diode array

Characterization of Al In GaN/GaN Heterointerface by HAADF-STEM and Electron Holography

Electrical characteristics of GaN implanted with Si + at elevated temperatures

Photodegradation of toluene over TiO2-xNx under visible light irradiation

Activation characteristics of ion-implanted Si + in AlGaN

Hydrogen sensors based on GaN diodes: The sensing mechanism

Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Design of junction termination structures for GaN Schottky power rectifiers

Edge termination design and simulation for bulk GaN rectifiers

Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure

Si + ion implanted MPS bulk GaN diodes

Charge pumping in Sc2O3∕GaN gated mos diodes

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