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Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3

Journal of applied physics, 2021-06, Vol.129 (22)

2021

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Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

APL materials, 2019-02, Vol.7 (2), p.022512-022512-12

2019

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Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

Scientific reports, 2021-04, Vol.11 (1), p.7497-7497, Article 7497

2021

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Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JA06-08JA06-6

2013

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Heading for brighter and faster β-Ga2O3 scintillator crystals

Optical materials. X, 2022-08, Vol.15, p.100157, Article 100157

2022

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A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment

Communications materials, 2022-12, Vol.3 (1), p.1-10, Article 12

2022

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Growth, characterization, and properties of bulk SnO2 single crystals

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.66-73

2014

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Evolution of impurity incorporation during ammonothermal growth of GaN

Journal of crystal growth, 2016-12, Vol.456, p.51-57

2016

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Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

Crystals (Basel), 2022-01, Vol.12 (1), p.8

2022

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Low temperature thermoluminescence of β-Ga2O3 scintillator

Optical materials. X, 2022-10, Vol.16, p.100210, Article 100210

2022

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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

AIP advances, 2021-11, Vol.11 (11), p.115323-115323-6

2021

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Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

Journal of materials science, 2016-04, Vol.51 (7), p.3650-3656

2016

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On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Journal of crystal growth, 2014-10, Vol.404, p.184-191

2014

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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs

IEEE electron device letters, 2016-07, Vol.37 (7), p.902-905

2016

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Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Journal of crystal growth, 2018-03, Vol.486, p.82-90

2018

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Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions

Journal of crystal growth, 2020-01, Vol.529, p.125297, Article 125297

2020

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Resonant electronic Raman scattering from Ir4+ ions in β-Ga2O3

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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Current Status of Carbon‐Related Defect Luminescence in GaN

Physica status solidi. A, Applications and materials science, 2021-10, Vol.218 (20), p.n/a

2021

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Comparative Raman spectroscopy of astrobiology relevant bio‐samples and planetary surface analogs under UV–VIS–IR excitation

Journal of Raman spectroscopy, 2024-01, Vol.55 (1), p.26-42

2024

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Epitaxial BaSnO 3 thin films with low dislocation density grown on lattice matched LaInO 3 substrates

Nanotechnology, 2021-12, Vol.32 (50), p.505609

2021

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Epitaxial BaSnO3thin films with low dislocation density grown on lattice matched LaInO3substrates

Nanotechnology, 2021-12, Vol.32 (50)

2021

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Ti- and Fe-related charge transition levels in β−Ga2O3

Applied physics letters, 2020-02, Vol.116 (7)

2020

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Semiconductor scintillator development: Pure and doped β-Ga2O3

Optical materials, 2020-07, Vol.105, p.109856, Article 109856

2020

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Epitaxial BaSnO3 thin films with low dislocation density grown on lattice matched LaInO3 substrates

Nanotechnology, 2021-12, Vol.32 (50)

2021

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Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters

Applied physics letters, 2021-03, Vol.118 (13)

2021

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Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3

Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

Heading for brighter and faster β-Ga2O3 scintillator crystals

A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment

Growth, characterization, and properties of bulk SnO2 single crystals

Evolution of impurity incorporation during ammonothermal growth of GaN

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

Low temperature thermoluminescence of β-Ga2O3 scintillator

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions

Resonant electronic Raman scattering from Ir4+ ions in β-Ga2O3

Current Status of Carbon‐Related Defect Luminescence in GaN

Comparative Raman spectroscopy of astrobiology relevant bio‐samples and planetary surface analogs under UV–VIS–IR excitation

Epitaxial BaSnO 3 thin films with low dislocation density grown on lattice matched LaInO 3 substrates

Epitaxial BaSnO3thin films with low dislocation density grown on lattice matched LaInO3substrates

Ti- and Fe-related charge transition levels in β−Ga2O3

Semiconductor scintillator development: Pure and doped β-Ga2O3

Epitaxial BaSnO3 thin films with low dislocation density grown on lattice matched LaInO3 substrates

Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters

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