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Lactobacillus sucicola sp. nov., a motile lactic acid bacterium isolated from oak tree (Quercus sp.) sap

International journal of systematic and evolutionary microbiology, 2009-11, Vol.59 (11), p.2662-2665

2009

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Device structures and carrier transport properties of advanced CMOS using high mobility channels

Solid-state electronics, 2007-04, Vol.51 (4), p.526-536

2007

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CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications-Position and Growth Direction Control and Gas Source Synthesis

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.1159-1163

2018

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Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

AIP advances, 2018-05, Vol.8 (5), p.055922-055922-5

2018

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Spin polarization vectors of field emitted electrons from Fe/W tips

New journal of physics, 2009-11, Vol.11 (11), p.113031

2009

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Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.649-654

2008

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IEEE_Xplore

High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2809-2815

2006

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IEEE_Xplore

Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies

2018 IEEE Symposium on VLSI Technology, 2018, p.191-192

2018

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IEEE_Xplore

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Applied physics letters, 2002-07, Vol.81 (5), p.847-849

2002

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Communicating by electrolarynx with a blind tetraplegic spinal cord injury patient on mechanical ventilation in the ICU

Spinal cord, 2013-04, Vol.51 (4), p.341-342

2013

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On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

IEEE transactions on electron devices, 2005-05, Vol.52 (5), p.993-998

2005

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IEEE_Xplore

Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

Thin solid films, 2008-11, Vol.517 (1), p.167-169

2008

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First experimental observation of channel thickness scaling (down to 3 nm) induced mobility enhancement in UTB GeOI nMOSFETs

2017 Symposium on VLSI Technology, 2017, p.T192-T193

2017

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Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S227-S230

2007

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Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3159-3166

2008

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IEEE_Xplore

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1651-1658

2009

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IEEE_Xplore

Device Design of High-Speed Source-Heterojunction-MOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2598-2605

2007

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IEEE_Xplore

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Applied surface science, 2002-05, Vol.190 (1), p.517-520

2002

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Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Applied physics letters, 2003-03, Vol.82 (9), p.1425-1427

2003

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Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

Applied physics letters, 2002-04, Vol.80 (17), p.3117-3119

2002

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Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Journal of applied physics, 2005-04, Vol.97 (8), p.083701-083701-6

2005

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Performance enhancement of partially and fully depleted strained-SOI MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1030-1038

2006

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IEEE_Xplore

Silicon-compatible low resistance S/D technologies for high-performance top-gate self-aligned InGaZnO TFTs with UTBB (ultra-thin body and BOX) structures

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T214-T215

2015

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IEEE_Xplore

Comparison of BISAP, Ranson, MCTSI, and APACHE II in Predicting Severity and Prognoses of Hyperlipidemic Acute Pancreatitis in Chinese Patients

Gastroenterology research and practice, 2016-01, Vol.2016, p.1834256-7

2016

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Surface reconstruction of clean bcc-Fe{1 1 0}: A quasi-hexagonal top-layer with periodic height modulation

Surface science, 2009-01, Vol.603 (2), p.315-319

2009

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Lactobacillus sucicola sp. nov., a motile lactic acid bacterium isolated from oak tree (Quercus sp.) sap

Device structures and carrier transport properties of advanced CMOS using high mobility channels

CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications-Position and Growth Direction Control and Gas Source Synthesis

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Spin polarization vectors of field emitted electrons from Fe/W tips

Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Communicating by electrolarynx with a blind tetraplegic spinal cord injury patient on mechanical ventilation in the ICU

On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs

Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique

First experimental observation of channel thickness scaling (down to 3 nm) induced mobility enhancement in UTB GeOI nMOSFETs

Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

Device Design of High-Speed Source-Heterojunction-MOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Performance enhancement of partially and fully depleted strained-SOI MOSFETs

Silicon-compatible low resistance S/D technologies for high-performance top-gate self-aligned InGaZnO TFTs with UTBB (ultra-thin body and BOX) structures

Comparison of BISAP, Ranson, MCTSI, and APACHE II in Predicting Severity and Prognoses of Hyperlipidemic Acute Pancreatitis in Chinese Patients

Surface reconstruction of clean bcc-Fe{1 1 0}: A quasi-hexagonal top-layer with periodic height modulation

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