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Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Journal of applied physics, 2021-04, Vol.129 (16)

2021

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Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Journal of applied physics, 2019-12, Vol.126 (21)

2019

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Analysis of disproportionation process of trifluoroethylene mixtures

Journal of loss prevention in the process industries, 2018-07, Vol.54, p.179-182

2018

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Analysis of disproportionation process of trifluoroethylene using high power spark ignitions over 5 J

Journal of loss prevention in the process industries, 2018-01, Vol.51, p.36-41

2018

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Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1594-1596

2011

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Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(3), pp.47-3-04

2020

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Dual-peak electroluminescence spectra generated from Al n /12 Ga 1-n/12 N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Journal of physics. D, Applied physics, 2022-06, Vol.55 (25), p.255102

2022

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Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6), p.61002

2017

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Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Journal of physics. D, Applied physics, 2022-06, Vol.55 (25)

2022

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Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Journal of physics. D, Applied physics, 2021-12, Vol.54 (48)

2021

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Discrete wavelengths observed in electroluminescence originating from Al 1/2 Ga 1/2 N and Al 1/3 Ga 2/3 N created in nonflat AlGaN quantum wells

Journal of physics. D, Applied physics, 2021-12, Vol.54 (48), p.485107

2021

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Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.122101

2011

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Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8), p.82101

2016

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Fabrication of large-sized silica monolith exceeding 1000 mL with high structural homogeneity

Journal of separation science, 2013-06, Vol.36 (12), p.1890-1896

2013

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Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.122101-122101-3

2011

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Study on the sensing mechanism of tin oxide flammable gas sensors using the Hall effect

Journal of applied physics, 1991-06, Vol.69 (12), p.8368-8374

1991

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マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

日本結晶成長学会誌, 2020, Vol.47(3), pp.47-3-04

2020

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Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011)

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.n/a

2011

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Gbps-Class Solar-Blind WDM Optical Wireless Communication By (264, 274, 282)-nm Deep-UV LEDs and CsTe Photomultiplier Tube

2023 Optical Fiber Communications Conference and Exhibition (OFC), 2023, p.1-3

2023

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An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band

2019 Conference on Lasers and Electro-Optics (CLEO), 2019, p.1-2

2019

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Up-to 292-Mbps Deep-UV Communication over a Diffuse-Line-of-Sight Link Based on Silicon Photo Multiplier Array

2020 European Conference on Optical Communications (ECOC), 2020, p.1-4

2020

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Characterization of a Self-Organized Deep-Ultraviolet Micro-Light-Emitting Diode Structure for High-Speed Solar-Blind Optical Wireless Communications

2020 Conference on Lasers and Electro-Optics (CLEO), 2020, p.1-2

2020

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Thermal Expansion Properties of A-Site Deficient La(Sr)CrO3

Journal of the Ceramic Society of Japan, 1993/07/01, Vol.101(1175), pp.769-772

1993

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Model of the external magnetic field effect on the H 2O 2 reaction on an SnO 2 surface

Surface science, 1993, Vol.298 (1), p.L191-L195

1993

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Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Analysis of disproportionation process of trifluoroethylene mixtures

Analysis of disproportionation process of trifluoroethylene using high power spark ignitions over 5 J

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps

Dual-peak electroluminescence spectra generated from Al n /12 Ga 1-n/12 N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Discrete wavelengths observed in electroluminescence originating from Al 1/2 Ga 1/2 N and Al 1/3 Ga 2/3 N created in nonflat AlGaN quantum wells

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

Fabrication of large-sized silica monolith exceeding 1000 mL with high structural homogeneity

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Study on the sensing mechanism of tin oxide flammable gas sensors using the Hall effect

マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011)

Gbps-Class Solar-Blind WDM Optical Wireless Communication By (264, 274, 282)-nm Deep-UV LEDs and CsTe Photomultiplier Tube

An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band

Up-to 292-Mbps Deep-UV Communication over a Diffuse-Line-of-Sight Link Based on Silicon Photo Multiplier Array

Characterization of a Self-Organized Deep-Ultraviolet Micro-Light-Emitting Diode Structure for High-Speed Solar-Blind Optical Wireless Communications

Thermal Expansion Properties of A-Site Deficient La(Sr)CrO3

Model of the external magnetic field effect on the H 2O 2 reaction on an SnO 2 surface

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