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Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Applied physics letters, 2004-10, Vol.85 (17), p.3899-3901

2004

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Roll-to-roll UV imprint lithography for flexible electronics

Microelectronic engineering, 2011-08, Vol.88 (8), p.2052-2055

2011

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Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Applied physics letters, 2005-01, Vol.86 (3)

2005

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Low-noise 1 THz superconductor–insulator–superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit

Applied physics letters, 2001-07, Vol.79 (3), p.436-438

2001

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Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films

Journal of applied physics, 2002-11, Vol.92 (9), p.4999-5005

2002

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Texture-related roughness of (Nb,Ti)N sputter-deposited films

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.3301-3304

2003

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Dielectric response of sputtered transition metal oxides

Journal of applied physics, 2004-06, Vol.95 (12), p.8087-8091

2004

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A low-noise double-dipole antenna SIS mixer at 1 THz

Physica. C, Superconductivity, 2002-08, Vol.372, p.374-377

2002

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Source optimization for magnetron sputter-deposition of NbTiN tuning elements for SIS THz detectors

Superconductor science & technology, 1999-11, Vol.12 (11), p.736-740

1999

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Niobium tunnel junctions with multi-layered electrodes

IEEE transactions on applied superconductivity, 1999-06, Vol.9 (2), p.3970-3973

1999

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Characterization of the fabrication process of Nb/Al–AlNx/Nb tunnel junctions with low RnA values up to 1 Ω μm2

Superconductor science & technology, 2002-06, Vol.15 (6), p.945-951

2002

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Superconducting transition metal nitride films for THz SIS mixers

IEEE transactions on applied superconductivity, 2001-03, Vol.11 (1), p.3832-3835

2001

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Reactive magnetron sputter-deposition of NbN and (Nb, Ti)N films related to sputtering source characterization and optimization

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1840-1845

2001

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On-chip radiation detection from stacked Josephson flux-flow oscillators

Journal of applied physics, 1996-12, Vol.80 (12), p.7134-7137

1996

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Optimization of RF- and DC-sputtered NbTiN films for integration with Nb-based SIS junctions

IEEE transactions on applied superconductivity, 1999-06, Vol.9 (2), p.1716-1719

1999

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NbTiN/SiO2/Al tuning circuits for low-noise 1 THz SIS mixers

IEEE transactions on applied superconductivity, 2001-03, Vol.11 (1), p.653-656

2001

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Properties of DC magnetron sputtered Nb and NbN films for different source conditions

IEEE transactions on applied superconductivity, 1999-06, Vol.9 (2), p.1720-1723

1999

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Observation of high voltage resonances in one-dimensional arrays

Journal of low temperature physics, 1997, Vol.106 (3-4), p.353-358

1997

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On-chip radiation detection from stacked Josephson flux-flow oscillators

IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.3601-3604

1997

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Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.2805-2808

1997

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1-THz low-noise SIS mixer with a double-dipole antenna

Technical physics, 2002-09, Vol.47 (9), p.1152-1157

2002

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Influence of the gate leakage current on the stability of organicsingle-crystal field-effect transistors

Applied physics letters, 2005-01, Vol.86 (3), p.032103-032103-3

2005

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Properties of (Nb0.35, Ti0.15)xNi1−x thin films deposited on silicon wafers at ambient substrate temperature

Journal of applied physics, 2000-11, Vol.88 (10), p.5756-5759

2000

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Analysis of the fabrication process of Nb/Al-AlNx/Nb tunnel junctions with low RnA values for SIS mixers

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.127

2003

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Characterization of the fabrication process of Nb/Al$ndash$AlNx/Nb tunnel junctions with low RnA values up to 1 $\Omega$ $\mu$m2

Superconductor science & technology, 2002-06, Vol.15 (6), p.945-951, Article 319

2002

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Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Roll-to-roll UV imprint lithography for flexible electronics

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Low-noise 1 THz superconductor–insulator–superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit

Texture formation in sputter-deposited (Nb0.7,Ti0.3)N thin films

Texture-related roughness of (Nb,Ti)N sputter-deposited films

Dielectric response of sputtered transition metal oxides

A low-noise double-dipole antenna SIS mixer at 1 THz

Source optimization for magnetron sputter-deposition of NbTiN tuning elements for SIS THz detectors

Niobium tunnel junctions with multi-layered electrodes

Characterization of the fabrication process of Nb/Al–AlNx/Nb tunnel junctions with low RnA values up to 1 Ω μm2

Superconducting transition metal nitride films for THz SIS mixers

Reactive magnetron sputter-deposition of NbN and (Nb, Ti)N films related to sputtering source characterization and optimization

On-chip radiation detection from stacked Josephson flux-flow oscillators

Optimization of RF- and DC-sputtered NbTiN films for integration with Nb-based SIS junctions

NbTiN/SiO2/Al tuning circuits for low-noise 1 THz SIS mixers

Properties of DC magnetron sputtered Nb and NbN films for different source conditions

Observation of high voltage resonances in one-dimensional arrays

On-chip radiation detection from stacked Josephson flux-flow oscillators

Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

1-THz low-noise SIS mixer with a double-dipole antenna

Influence of the gate leakage current on the stability of organicsingle-crystal field-effect transistors

Properties of (Nb0.35, Ti0.15)xNi1−x thin films deposited on silicon wafers at ambient substrate temperature

Analysis of the fabrication process of Nb/Al-AlNx/Nb tunnel junctions with low RnA values for SIS mixers

Characterization of the fabrication process of Nb/Al$ndash$AlNx/Nb tunnel junctions with low RnA values up to 1 $\Omega$ $\mu$m2

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