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Tunnel field-effect transistors as energy-efficient electronic switches

Nature (London), 2011-11, Vol.479 (7373), p.329-337

2011

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Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Nature communications, 2022-11, Vol.13 (1), p.7239-7239, Article 7239

2022

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Near optimal graphene terahertz non-reciprocal isolator

Nature communications, 2016-04, Vol.7 (1), p.11216-11216, Article 11216

2016

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Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

IEEE electron device letters, 2012-11, Vol.33 (11), p.1523-1525

2012

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Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

IEEE electron device letters, 2012-02, Vol.33 (2), p.167-169

2012

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IEEE_Xplore

Elevated transition temperature in Ge doped VO2 thin films

Journal of applied physics, 2017-07, Vol.122 (4)

2017

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Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices

Nanotechnology, 2016-03, Vol.27 (11), p.115201-115201

2016

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Extended gate field-effect-transistor for sensing cortisol stress hormone

Communications materials, 2021-01, Vol.2 (1), p.10-10, Article 10

2021

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Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

Frontiers in neuroscience, 2021-02, Vol.15, p.628254-628254

2021

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TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

Microelectronic engineering, 2012-10, Vol.98, p.334-337

2012

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Crowdsensing IoT Architecture for Pervasive Air Quality and Exposome Monitoring: Design, Development, Calibration, and Long-Term Validation

Sensors (Basel, Switzerland), 2021-07, Vol.21 (15), p.5219

2021

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The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2603-2609

2016

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IEEE_Xplore

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.939-947

2020

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A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

Sensors (Basel, Switzerland), 2021-03, Vol.21 (5), p.1802

2021

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Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

IEEE access, 2020, Vol.8, p.198010-198020

2020

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Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Communications materials, 2023-12, Vol.4 (1), p.34-34, Article 34

2023

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The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Sensors and actuators. B, Chemical, 2014-03, Vol.193, p.400-412

2014

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On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2932-2938

2012

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IEEE_Xplore

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

NPJ 2D materials and applications, 2021-09, Vol.5 (1), p.1-10, Article 76

2021

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Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4678-4684

2016

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IEEE_Xplore

Negative capacitance gives a positive boost

Nature nanotechnology, 2018-01, Vol.13 (1), p.7-8

Ionescu, Adrian M

2018

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Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

IEEE access, 2018-01, Vol.6, p.12206-12212

2018

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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Nano letters, 2020-05, Vol.20 (5), p.3255-3262

2020

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Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

IEEE sensors journal, 2022-05, Vol.22 (10), p.9276-9288

2022

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IEEE_Xplore

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Tunnel field-effect transistors as energy-efficient electronic switches

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Near optimal graphene terahertz non-reciprocal isolator

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Elevated transition temperature in Ge doped VO2 thin films

Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices

Extended gate field-effect-transistor for sensing cortisol stress hormone

Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

Crowdsensing IoT Architecture for Pervasive Air Quality and Exposome Monitoring: Design, Development, Calibration, and Long-Term Validation

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

Investigation of tunnel field-effect transistors as a capacitor-less memory cell

Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

Negative capacitance gives a positive boost

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

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