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Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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IgA vasculitis induced by carboplatin + nab-paclitaxel + pembrolizumab in a patient with advanced lung squamous cell carcinoma: a case report

Frontiers in immunology, 2024, Vol.15, p.1370972

2024

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Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation

Thin solid films, 2012-07, Vol.520 (19), p.6179-6182

2012

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Successful immunosuppressant-free treatment of a drug-induced sarcoidosis-like reaction caused by dupilumab

Respiratory medicine case reports, 2023-01, Vol.44, p.101883, Article 101883

2023

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Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO2 regions on Si(100) substrates

Thin solid films, 2011-06, Vol.519 (17), p.5775-5779

2011

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Perfect Separation of Hybrid Orientation Structure of CeO 2 (100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches

ECS transactions, 2016-07, Vol.72 (19), p.35-45

2016

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Perfect Separation of Hybrid Orientation Structure of CeO 2 (100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches

ECS journal of solid state science and technology, 2016, Vol.5 (12), p.N97-N101

2016

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Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates

Journal of crystal growth, 2006-04, Vol.289 (2), p.534-539

2006

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Growth of CeO2 Films on Glass Substrates Using Electron-Beam-Assisted Evaporation

Crystal growth & design, 2003-03, Vol.3 (2), p.115-116

2003

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Hybrid Orientation Substrate Fabrication Using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO 2 (100) and (110) Areas on Si(100) Substrates

ECS transactions, 2012-04, Vol.45 (3), p.443-451

2012

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Orientation selective epitaxial growth of CeO2(100) and CeO2(110) layers on Si(100) substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-01, Vol.22 (1), p.46-48

2004

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Electron-beam-assisted evaporation of epitaxial CeO2 thin films on Si substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-01, Vol.19 (1), p.275-279

2001

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Electrical characteristics of metal/cerium dioxide/silicon structures

Japanese Journal of Applied Physics, 1995, Vol.34 (2A), p.548-553

1995

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Electron Beam Induced Orientation Selective Epitaxial Growth of CeO 2 (100)/Si(100) Structures using Absorption Electron Imaging System

ECS transactions, 2009-09, Vol.25 (6), p.187-197

2009

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Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO 2 regions on Si(100) substrates

Thin solid films, 2011, Vol.519 (17), p.5775-5779

2011

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Improved lifespan of micro-scale punch tools by ion implantation

Transactions of the Materials Research Society of Japan, 2007, Vol.32 (4), p.865-868

2007

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Electron beam induced orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates

Journal of crystal growth, 2007-06, Vol.304 (1), p.1-3

2007

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Electron beam induced orientation selective epitaxial growth of layers on Si(100) substrates

Journal of crystal growth, 2007-06, Vol.304 (1), p.1-3

2007

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Surface structure of single-crystal CeO2 layers grown on Si

Thin solid films, 1996-08, Vol.281-282, p.24-27

1996

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Low-Temperature Epitaxial Growth of CeO 2 (110)/Si(100) Structure by Evaporation under Substrate Bias

Japanese Journal of Applied Physics, 1996-12, Vol.35 (12B), p.L1685

1996

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Electron beam induced orientation selective epitaxial growth of CeO 2 ( 1 0 0 ) layers on Si(1 0 0) substrates

Journal of crystal growth, 2007, Vol.304 (1), p.1-3

2007

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Low-temperature epitaxial growth of CeO2(110)/Si(100) structure by evaporation under substrate bias

Japanese journal of applied physics, 1996-12, Vol.35 (12B), p.L1685-L1688

1996

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Characterization of orientation-selective-epitaxial CeO2 layers on Si(100) substrates by x-ray diffraction and cross-sectional transmission electron microscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2007-07, Vol.25 (4), p.1128-1132

2007

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Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of CeO 2 ( 1 0 0 ) layers on Si(1 0 0) substrates

Journal of crystal growth, 2006, Vol.289 (2), p.534-539

2006

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Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates

Journal of crystal growth, 2006-04, Vol.289 (2), p.534-539

2006

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Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy

IgA vasculitis induced by carboplatin + nab-paclitaxel + pembrolizumab in a patient with advanced lung squamous cell carcinoma: a case report

Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation

Successful immunosuppressant-free treatment of a drug-induced sarcoidosis-like reaction caused by dupilumab

Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO2 regions on Si(100) substrates

Perfect Separation of Hybrid Orientation Structure of CeO 2 (100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches

Perfect Separation of Hybrid Orientation Structure of CeO 2 (100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches

Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of layers on Si(100) substrates

Growth of CeO2 Films on Glass Substrates Using Electron-Beam-Assisted Evaporation

Hybrid Orientation Substrate Fabrication Using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO 2 (100) and (110) Areas on Si(100) Substrates

Orientation selective epitaxial growth of CeO2(100) and CeO2(110) layers on Si(100) substrates

Electron-beam-assisted evaporation of epitaxial CeO2 thin films on Si substrates

Electrical characteristics of metal/cerium dioxide/silicon structures

Electron Beam Induced Orientation Selective Epitaxial Growth of CeO 2 (100)/Si(100) Structures using Absorption Electron Imaging System

Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO 2 regions on Si(100) substrates

Improved lifespan of micro-scale punch tools by ion implantation

Electron beam induced orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates

Electron beam induced orientation selective epitaxial growth of layers on Si(100) substrates

Surface structure of single-crystal CeO2 layers grown on Si

Low-Temperature Epitaxial Growth of CeO 2 (110)/Si(100) Structure by Evaporation under Substrate Bias

Electron beam induced orientation selective epitaxial growth of CeO 2 ( 1 0 0 ) layers on Si(1 0 0) substrates

Low-temperature epitaxial growth of CeO2(110)/Si(100) structure by evaporation under substrate bias

Characterization of orientation-selective-epitaxial CeO2 layers on Si(100) substrates by x-ray diffraction and cross-sectional transmission electron microscopy

Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of CeO 2 ( 1 0 0 ) layers on Si(1 0 0) substrates

Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates

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