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Enhanced superconductivity close to a non-magnetic quantum critical point in electron-doped strontium titanate

Nature communications, 2019-02, Vol.10 (1), p.738-738, Article 738

2019

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CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Applied physics letters, 2023-02, Vol.122 (7)

2023

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Metal oxide memories based on thermochemical and valence change mechanisms

MRS bulletin, 2012-02, Vol.37 (2), p.131-137

2012

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Superconductivity enhancement in polar metal regions of Sr0.95Ba0.05TiO3 and Sr0.985Ca0.015TiO3 revealed by systematic Nb doping

npj quantum materials, 2022-11, Vol.7 (1), p.1-8, Article 111

2022

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Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface

Scientific reports, 2016-05, Vol.6 (1), p.25789-25789, Article 25789

2016

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Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Advanced materials (Weinheim), 2011-12, Vol.23 (48), p.5822-5827

2011

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Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Advanced materials (Weinheim), 2013-04, Vol.25 (15), p.2158-2161

2013

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An ultra-compact leaky integrate-and-fire neuron with long and tunable time constant utilizing pseudo resistors for spiking neural networks

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1051

2022

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Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

Advanced functional materials, 2023-10, Vol.33 (41)

2023

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Two-dimensional quantum transport: Tunnel vision

Nature physics, 2014-10, Vol.10 (10), p.705

Inoue, Isao H

2014

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Resistance switching in the metal deficient-type oxides: NiO and CoO

Applied physics letters, 2007-07, Vol.91 (1), p.012901-012901-3

2007

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Taming the Mott Transition for a Novel Mott Transistor

Advanced functional materials, 2008-08, Vol.18 (16), p.2289-2292

2008

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Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Glasslike thermal conductivity and narrow insulating gap of EuTiO 3

Physical review materials, 2023-09, Vol.7 (9), Article 094604

2023

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Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode

MRS proceedings, 2008, Vol.1071, Article 1071-F05-19

2008

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Tunnel vision

Nature physics, 2014-08, Vol.10 (10), p.705-706

Inoue, Isao H.

2014

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Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO 3 Interface by Electric Field

Journal of the Physical Society of Japan, 2009-08, Vol.78 (8), p.83713

2009

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Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

Japanese Journal of Applied Physics, 2007-01, Vol.46 (1L), p.L57

2007

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Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer

Applied physics letters, 2008-01, Vol.92 (4)

2008

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Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

Applied physics letters, 2008-09, Vol.93 (11), p.113504-113504-3

2008

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Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

MRS proceedings, 2007, Vol.997, Article 0997-I07-08

2007

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Electrolyte‐Gated SmCoO 3 Thin‐Film Transistors Exhibiting Thickness‐Dependent Large Switching Ratio at Room Temperature

Advanced materials (Weinheim), 2013-04, Vol.25 (15), p.2158-2161

2013

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Electrolyte-Gated SmCoO sub(3) Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Advanced materials (Weinheim), 2013-04, Vol.25 (15), p.2158-2161

2013

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CREST project focused on neuromorphic devices and networks

Impact, 2020-11, Vol.2020 (5), p.6-9

Inoue, Isao H

2020

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Enhanced superconductivity close to a non-magnetic quantum critical point in electron-doped strontium titanate

CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Metal oxide memories based on thermochemical and valence change mechanisms

Superconductivity enhancement in polar metal regions of Sr0.95Ba0.05TiO3 and Sr0.985Ca0.015TiO3 revealed by systematic Nb doping

Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

An ultra-compact leaky integrate-and-fire neuron with long and tunable time constant utilizing pseudo resistors for spiking neural networks

Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

Two-dimensional quantum transport: Tunnel vision

Resistance switching in the metal deficient-type oxides: NiO and CoO

Taming the Mott Transition for a Novel Mott Transistor

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing

Glasslike thermal conductivity and narrow insulating gap of EuTiO 3

Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode

Tunnel vision

Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO 3 Interface by Electric Field

Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

Electrolyte‐Gated SmCoO 3 Thin‐Film Transistors Exhibiting Thickness‐Dependent Large Switching Ratio at Room Temperature

Electrolyte-Gated SmCoO sub(3) Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

CREST project focused on neuromorphic devices and networks

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