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A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.563-571

2007

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Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2220-2226

2005

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A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1536

2000

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Design of a 128-mb SOI DRAM using the floating body cell (FBC)

IEEE journal of solid-state circuits, 2006-01, Vol.41 (1), p.135-145

2006

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Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.414-421

2002

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Novel lateral bipolar transistor with 67 GHz f sub(max) on thin-film SOI for RF analog applications

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1536-1541

2000

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Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.132-133

2004

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An 18.5ns 128MB SOI DRAM with a floating body cell

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.458-609 Vol. 1

2005

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A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications

2006 IEEE International Conference on IC Design and Technology, 2006, p.1-6

2006

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0.3- mu m Si epitaxial base BiCMOS technology with 37-GHz f sub(max) and 10-V BV sub(ceo) for RF telecommunication

IEEE transactions on electron devices, 1999-01, Vol.46 (4), p.712-721

1999

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Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.281-284

2004

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Highly scalable FBC (floating body cell) with 25nm BOX structure for embedded DRAM applications

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A floating body cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.307-310

2005

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Diagnosis and classification of the mitral valve prolapse by the ultrasoundcardiotomography and the evaluation of the M-mode technic

Japanese circulation journal, 1979-04, Vol.43 (4), p.305-312

1979

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A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability

Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications

Design of a 128-mb SOI DRAM using the floating body cell (FBC)

Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications

Novel lateral bipolar transistor with 67 GHz f sub(max) on thin-film SOI for RF analog applications

Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

An 18.5ns 128MB SOI DRAM with a floating body cell

A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications

0.3- mu m Si epitaxial base BiCMOS technology with 37-GHz f sub(max) and 10-V BV sub(ceo) for RF telecommunication

Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

Highly scalable FBC (floating body cell) with 25nm BOX structure for embedded DRAM applications

A floating body cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Diagnosis and classification of the mitral valve prolapse by the ultrasoundcardiotomography and the evaluation of the M-mode technic

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