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Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

Advanced materials (Weinheim), 2023-09, Vol.35 (37), p.e2201238-e2201238

2023

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Design of projected phase-change memory mushroom cells for low-resistance drift

MRS bulletin, 2023-03, Vol.48 (3), p.228-236

2023

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HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks

Advanced intelligent systems, 2022-05, Vol.4 (5), p.n/a

2022

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Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Applied physics letters, 2008-05, Vol.92 (20)

2008

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Correlated Flicker Noise and Hole Mobility Characteristics of (\hbox)/\langle\hbox\rangle Uniaxially Strained SiGe FINFETs

IEEE electron device letters, 2012-09, Vol.33 (9), p.1237-1239

2012

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Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

IEEE electron device letters, 2012-03, Vol.33 (3), p.351-353

2012

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Interface-Trap Effects in Inversion-Type Enhancement-Mode \hbox N-Channel MOSFETs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.107-114

2011

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Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs

IEEE electron device letters, 2012-05, Vol.33 (5), p.631-633

2012

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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Applied physics letters, 2008-05, Vol.92 (20)

2008

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HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1027-1038

2022

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Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation

Applied physics letters, 2005-01, Vol.86 (1), p.012901-012901-3

2005

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The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni–Pt salicidation FinFETs

Solid-state electronics, 2015-12, Vol.114, p.167-170

2015

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Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.532-535

2010

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Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

2009 Symposium on VLSI Technology, 2009, p.100-101

2009

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Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Applied physics letters, 2006-11, Vol.89 (22)

2006

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Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-07, Vol.30 (4)

2012

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Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Applied physics letters, 2006-06, Vol.88 (25)

2006

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n- and p-channel TaN/HfO2 MOSFETs on GaAs substrate using a germanium interfacial passivation layer

2007 65th Annual Device Research Conference, 2007, p.99-100

2007

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied physics letters, 2007-07, Vol.91 (4)

2007

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Interface-Trap Effects in Inversion-Type Enhancement-Mode hbox InGaAs / ZrO 2 N-Channel MOSFETs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.107-114

2011

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Interface-Trap Effects in Inversion-Type Enhancement-Mode [Formula Omitted] N-Channel MOSFETs

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.107

2011

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Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

Design of projected phase-change memory mushroom cells for low-resistance drift

HERMES-Core-A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Correlated Flicker Noise and Hole Mobility Characteristics of (\hbox)/\langle\hbox\rangle Uniaxially Strained SiGe FINFETs

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

Interface-Trap Effects in Inversion-Type Enhancement-Mode \hbox N-Channel MOSFETs

Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs

Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference

HERMES-Core—A 1.59-TOPS/mm 2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs

Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation

The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni–Pt salicidation FinFETs

Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor

Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes

Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

n- and p-channel TaN/HfO2 MOSFETs on GaAs substrate using a germanium interfacial passivation layer

Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Interface-Trap Effects in Inversion-Type Enhancement-Mode hbox InGaAs / ZrO 2 N-Channel MOSFETs

Interface-Trap Effects in Inversion-Type Enhancement-Mode [Formula Omitted] N-Channel MOSFETs

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