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Characterization of silicon ion-implanted GaN and AlGaN

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.125-127

2012

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Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Journal of applied physics, 2004-07, Vol.96 (1), p.261-268

2004

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Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1571-1574

2009

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Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-01, Vol.16 (1), p.1-5

1998

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Characterization of BF 2 + ion-implanted layers in strained-silicon/SiGe heterostructures

Thin solid films, 2006, Vol.508 (1), p.284-287

2006

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WITHDRAWN: Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

Thin solid films, 2005-11

2005

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Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Journal of the Electrochemical Society, 1993-04, Vol.140 (4), p.1117-1121

1993

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Ultrashallow p -type layer formation by rapid vapor-phase doping using a lamp annealing apparatus

Applied physics letters, 1994-02, Vol.64 (7), p.910-911

1994

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Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

Thin solid films, 2006-06, Vol.508 (1-2), p.284-287

2006

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Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2441-2445

2001

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Behavior of active and inactive boron in Si produced by vapor-phase doping during subsequent hydrogen annealing

Japanese Journal of Applied Physics, 1995, Vol.34 (6A), p.2981-2985

1995

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Nitrogen implantation in (100)-β-SiC layers grown on Si substrate

Journal of applied physics, 1995-02, Vol.77 (3), p.1020-1028

1995

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Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

MRS proceedings, 2005, Vol.892, Article 0892-FF13-06

2005

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Fabrication and electrical characteristics of Ti/Al ohmic contact to Si + implanted GaN

MRS proceedings, 2005, Vol.892, Article 0892-FF14-03

2005

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Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface

Materials science in semiconductor processing, 2005-02, Vol.8 (1), p.89-95

2005

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Selenium implantation in indium phosphide

Journal of applied physics, 1981-07, Vol.52 (7), p.4863-4865

1981

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Ion Implantation in β ‐ SiC Layers Grown on (100)Si

Journal of the Electrochemical Society, 1994-12, Vol.141 (12), p.3489-3494

1994

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Phosphorus Direct Doping from Vapor Phase into Silicon for Shallow Junctions

Journal of the Electrochemical Society, 1994-08, Vol.141 (8), p.2241-2244

1994

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Boron δ-doping in Si using atmospheric pressure CVD

Applied surface science, 1994-12, Vol.82, p.400-404

1994

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Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

MRS proceedings, 1991, Vol.220, Article 569

1991

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GaAs Hall-effect devices fabricated by ion-implantation technique

Electronics letters, 1978, Vol.14 (16), p.503

1978

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DOPING OF SILICON BY ION IMPLANTATION

Applied physics letters, 1968-01, Vol.12 (8), p.244-246

1968

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Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD)

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2077-2081

1992

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Sub-Quarter-Micron PMOSFETs With Shallow Source And Drain Formed By Rapid Vapor-phase Doping (RVD)

Symposium 1993 on VLSI Technology, 1993, p.97-98

1993

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Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100)

Applied surface science, 1990-01, Vol.41-42, p.262-265

1990

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Characterization of silicon ion-implanted GaN and AlGaN

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection

Characterization of BF 2 + ion-implanted layers in strained-silicon/SiGe heterostructures

WITHDRAWN: Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping

Ultrashallow p -type layer formation by rapid vapor-phase doping using a lamp annealing apparatus

Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping

Behavior of active and inactive boron in Si produced by vapor-phase doping during subsequent hydrogen annealing

Nitrogen implantation in (100)-β-SiC layers grown on Si substrate

Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

Fabrication and electrical characteristics of Ti/Al ohmic contact to Si + implanted GaN

Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface

Selenium implantation in indium phosphide

Ion Implantation in β ‐ SiC Layers Grown on (100)Si

Phosphorus Direct Doping from Vapor Phase into Silicon for Shallow Junctions

Boron δ-doping in Si using atmospheric pressure CVD

Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

GaAs Hall-effect devices fabricated by ion-implantation technique

DOPING OF SILICON BY ION IMPLANTATION

Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD)

Sub-Quarter-Micron PMOSFETs With Shallow Source And Drain Formed By Rapid Vapor-phase Doping (RVD)

Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100)

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