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Accounting Quality, Auditing, and Corporate Governance

Accounting horizons, 2003-01, Vol.17 (s-1), p.117-128

Imhoff, Jr., Eugene A

2003

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High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3395-3400

2011

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IEEE_Xplore

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices

Materials science forum, 2009-01, Vol.600-603, p.1147-1150

2009

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Towards a polariton-based light emitter based on non-polar GaN quantum wells

Solid state communications, 2009-12, Vol.149 (45), p.2039-2042

2009

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Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Applied physics letters, 2012-01, Vol.100 (4), p.042102-042102-3

2012

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Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

Journal of micromechanics and microengineering, 2017-10, Vol.27 (9)

2017

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Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

Journal of electronic materials, 2010-05, Vol.39 (5), p.517-525

2010

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1864-1870

2008

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IEEE_Xplore

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Materials Science Forum, 2016-05, Vol.858, p.233-236

2016

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Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Materials science forum, 2015-06, Vol.821-823, p.297-302

2015

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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Materials science forum, 2014-02, Vol.778-780, p.324-327

2014

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Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

Materials science forum, 2013-01, Vol.740-742, p.855-858, Article 855

2013

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High-Current 10 kV SiC JBS Rectifier Performance

Materials science forum, 2009, Vol.600-603, p.943-946

2009

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The Effects of Recognition versus Disclosure on Shareholder Risk and Executive Compensation

Journal of Accounting, Auditing & Finance, 1993-10, Vol.8 (4), p.335-368

1993

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The relation between perceived accounting quality and economic characteristics of the firm

Journal of accounting and public policy, 1992-07, Vol.11 (2), p.97-118

Imhoff, Eugene A.

1992

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The Effect of Ex Ante Earnings Uncertainty on Earnings Response Coefficients

The Accounting review, 1992-04, Vol.67 (2), p.427-439

1992

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Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

Materials science forum, 2010-01, Vol.645-648, p.1215-1218

2010

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Deep reactive ion etching of 4H-SiC via cyclic SF 6 /O 2 segments

Journal of micromechanics and microengineering, 2017-10, Vol.27 (9), p.95004

2017

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Announcement of Editorial Transition

Accounting horizons, 2000-03, Vol.14 (1), p.91-91

Imhoff, Eugene A.

2000

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Operating Leases: Income Effects of Constructive Capitalization

Accounting horizons, 1997-06, Vol.11 (2), p.12

1997

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Six commentaries on characteristics of high quality accounting standards

Accounting horizons, 1998-06, Vol.12 (2), p.160

Imhoff, Eugene A

1998

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Accounting Horizons: Challenges and Changes

Accounting horizons, 1998-03, Vol.12 (1), p.83

Imhoff, Eugene A

1998

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Economic consequences of accounting standards: The lease disclosure rule change

Journal of accounting & economics, 1988-12, Vol.10 (4), p.277-310

1988

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Grayscale Junction Termination for High-Voltage SiC Devices

Materials science forum, 2009-01, Vol.615-617, p.691-694

2009

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The use of accounting information in bank lending decisions

Accounting, organizations and society, 1989, Vol.14 (3), p.235-246

1989

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Accounting Quality, Auditing, and Corporate Governance

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices

Towards a polariton-based light emitter based on non-polar GaN quantum wells

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

High-Current 10 kV SiC JBS Rectifier Performance

The Effects of Recognition versus Disclosure on Shareholder Risk and Executive Compensation

The relation between perceived accounting quality and economic characteristics of the firm

The Effect of Ex Ante Earnings Uncertainty on Earnings Response Coefficients

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

Deep reactive ion etching of 4H-SiC via cyclic SF 6 /O 2 segments

Announcement of Editorial Transition

Operating Leases: Income Effects of Constructive Capitalization

Six commentaries on characteristics of high quality accounting standards

Accounting Horizons: Challenges and Changes

Economic consequences of accounting standards: The lease disclosure rule change

Grayscale Junction Termination for High-Voltage SiC Devices

The use of accounting information in bank lending decisions

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