UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Journal of crystal growth, 2013-03, Vol.366, p.55-60

2013

Volltextzugriff (PDF)

X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well

Crystallography reports, 2017-05, Vol.62 (3), p.355-363

2017

Volltextzugriff (PDF)

Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Crystallography reports, 2017-11, Vol.62 (6), p.947-954

2017

Volltextzugriff (PDF)

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Crystallography reports, 2017-01, Vol.62 (1), p.82-90

2017

Volltextzugriff (PDF)

Detection of ultrathin amorphous layers by means of specular reflection under grazing-incidence diffraction conditions

Journal of physics. D, Applied physics, 2002-06, Vol.35 (12), p.1422-1427, Article 320

2002

Volltextzugriff (PDF)

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides

Semiconductors (Woodbury, N.Y.), 2008-09, Vol.42 (9), p.1084-1091

2008

Volltextzugriff (PDF)

Investigation of the structure of real indium antimonide surfaces by the asymptotic Bragg diffraction method

Surface science, 1992-09, Vol.275 (1), p.131-136

1992

Volltextzugriff (PDF)

Fluorescence Yield Curves under X-Ray Diffraction Conditions

August 16, 2021, Vol.66, Number 2, p.905-910

2021

Volltextzugriff (PDF)

X-ray imaging by angular raster scanning

Applied Optics, 1997-03, Vol.36 (7), p.1592

1997

Volltextzugriff (PDF)

Epitaxial low-temperature growth of In{sub 0.5}Ga{sub 0.5}As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Crystallography reports, 2017-11, Vol.62 (6)

2017

Volltextzugriff (PDF)

Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs

Technical physics, 2007-04, Vol.52 (4), p.440-445

2007

Volltextzugriff (PDF)

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Semiconductors (Woodbury, N.Y.), 2013-07, Vol.47 (7), p.997-1002

2013

Volltextzugriff (PDF)

X-Ray diffractometry of metamorphic nanoheterostructures

Crystallography reports, 2014-03, Vol.59 (2), p.258-265

2014

Volltextzugriff (PDF)

InAs quantum dots in multilayer GaAs-based heterostructures

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.204-208

2003

Volltextzugriff (PDF)

Structural characterization of quantum-well layers by double-crystal X-ray diffractometry

Crystallography reports, 2003-09, Vol.48 (5), p.728-743

2003

Volltextzugriff (PDF)

Optimization of the genetic algorithm of jointly fitting different types of X-ray scattering curves

Crystallography reports, 2011-01, Vol.56 (1), p.57-60

2011

Volltextzugriff (PDF)

X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well

Crystallography reports, 2017-05, Vol.62 (3)

2017

Volltextzugriff (PDF)

High-resolution transmission electron microscopy for crystallographic study of nanomaterials

Crystallography reports, 2011-07, Vol.56 (4), p.650-661

2011

Volltextzugriff (PDF)

Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

Crystallography reports, 2014-11, Vol.59 (6), p.900-907

2014

Volltextzugriff (PDF)

Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”

Crystallography reports, 2015-05, Vol.60 (3), p.449-449

2015

Volltextzugriff (PDF)

Electron diffraction structure analysis—from Vainshtein to our days

Crystallography reports, 2001-07, Vol.46 (4), p.534-549

2001

Volltextzugriff (PDF)

Double-crystal X-ray diffractometry in the role of X-ray standing-wave method

JETP letters, 2001-11, Vol.74 (10), p.498-501

2001

Volltextzugriff (PDF)

X-ray diagnostics of semiconductor heterostructures: Some achievements and perspectives for development

Surface investigation, x-ray, synchrotron and neutron techniques, 2010-02, Vol.4 (1), p.104-121

2010

Volltextzugriff (PDF)

Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer

Crystallography reports, 2014-05, Vol.59 (3), p.425-429

2014

Volltextzugriff (PDF)

High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

Surface investigation, x-ray, synchrotron and neutron techniques, 2016-05, Vol.10 (3), p.495-509

2016

Volltextzugriff (PDF)

1 – 25 von 130

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(92)
Mit Volltextzugriff
(118)

Publikationsform

Sprache

Englisch
(113)
Deutsch
(10)
Russisch
(8)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well

Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Detection of ultrathin amorphous layers by means of specular reflection under grazing-incidence diffraction conditions

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides

Investigation of the structure of real indium antimonide surfaces by the asymptotic Bragg diffraction method

Fluorescence Yield Curves under X-Ray Diffraction Conditions

X-ray imaging by angular raster scanning

Epitaxial low-temperature growth of In{sub 0.5}Ga{sub 0.5}As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

X-Ray diffractometry of metamorphic nanoheterostructures

InAs quantum dots in multilayer GaAs-based heterostructures

Structural characterization of quantum-well layers by double-crystal X-ray diffractometry

Optimization of the genetic algorithm of jointly fitting different types of X-ray scattering curves

X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well

High-resolution transmission electron microscopy for crystallographic study of nanomaterials

Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”

Electron diffraction structure analysis—from Vainshtein to our days

Double-crystal X-ray diffractometry in the role of X-ray standing-wave method

X-ray diagnostics of semiconductor heterostructures: Some achievements and perspectives for development

Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer

High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

Suchergebnisse filtern