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Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction

IEEE access, 2023-01, Vol.11, p.1-1

Im, Ki-Sik

2023

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High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3012-3018

2013

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IEEE_Xplore

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

Applied physics letters, 2022-01, Vol.120 (1)

2022

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Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application

Crystals (Basel), 2021-03, Vol.11 (3), p.234

2021

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AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

IEEE electron device letters, 2015-10, Vol.36 (10), p.1008-1010

2015

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IEEE_Xplore

Mobility Fluctuations in a Normally-Off GaN MOSFET Using Tetramethylammonium Hydroxide Wet Etching

IEEE electron device letters, 2021-01, Vol.42 (1), p.18-21

Im, Ki-Sik

2021

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IEEE_Xplore

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

IEEE electron device letters, 2010-03, Vol.31 (3), p.192-194

2010

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IEEE_Xplore

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer

Physica status solidi. A, Applications and materials science, 2024-07

2024

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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1547-1552

2020

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IEEE_Xplore

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3032-3039

2013

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IEEE_Xplore

1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

IEEE electron device letters, 2017-02, Vol.38 (2), p.252-254

2017

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IEEE_Xplore

Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure

Nano research, 2019-04, Vol.12 (4), p.809-814

2019

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Heterojunction-Free GaN Nanochannel FinFETs With High Performance

IEEE electron device letters, 2013-03, Vol.34 (3), p.381-383

2013

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IEEE_Xplore

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1629

2023

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Crystals (Basel), 2021-02, Vol.11 (2), p.87

2021

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Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

Electronic Materials Letters, 2020, 16(5), , pp.433-440

2020

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Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

Nanomaterials (Basel, Switzerland), 2023-12, Vol.13 (24), p.3159

2023

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Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions

Crystals (Basel), 2020-09, Vol.10 (9), p.830

2020

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Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Crystals (Basel), 2020-09, Vol.10 (9), p.848

2020

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Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (14), p.2132

2023

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Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.728-734

2021

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Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets

Micromachines (Basel), 2022-12, Vol.13 (12), p.2157

2022

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Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN

Crystals (Basel), 2020-12, Vol.10 (12), p.1091

2020

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Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Microelectronic engineering, 2015-11, Vol.147, p.155-158

2015

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Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application

AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

Mobility Fluctuations in a Normally-Off GaN MOSFET Using Tetramethylammonium Hydroxide Wet Etching

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer

Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets

Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

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