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Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5−x/TiOxNy framework

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Scientific reports, 2018-06, Vol.8 (1), p.1-9, Article 8532

2018

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Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

Advanced functional materials, 2012-02, Vol.22 (4), p.709-716

2012

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Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

Applied physics letters, 2013-08, Vol.103 (6)

2013

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Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix

Applied surface science, 2013-06, Vol.274, p.85-88

2013

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Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiO x /TiO y /TiO x and Hetero TiO x /TiON/TiO x Triple Multilayer Frameworks

Advanced functional materials, 2012-02, Vol.22 (4), p.709-716

2012

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Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments

Small (Weinheim an der Bergstrasse, Germany), 2018-12, Vol.14 (49), p.e1801032-n/a

2018

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Microlight‐Emitting Diodes: Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments (Small 49/2018)

Small (Weinheim an der Bergstrasse, Germany), 2018-12, Vol.14 (49), p.n/a

2018

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Structural, morphological, compositional, and optical properties of single step electrodeposited Cu2ZnSnS4 (CZTS) thin films for solar cell application

Current Applied Physics, 2014, 14(3), , pp.254-258

2014

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Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

Scientific reports, 2016-07, Vol.6 (1), p.30333-30333, Article 30333

2016

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Multifunctional resistive switching behaviors employing various electroforming steps

Journal of materials chemistry. C, Materials for optical and electronic devices, 2016-01, Vol.4 (4), p.823-830

2016

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Observation of bias-dependent noise sources in a TiO{sub x}/TiO{sub y} bipolar resistive switching frame

Applied physics letters, 2014-02, Vol.104 (8)

2014

Volltextzugriff (PDF)

Revealing Al evaporation-assisted functions in solution-processed ZnO thin film transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-01, Vol.2 (47), p.10209-10216

2014

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Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO sub(x)/TiO sub(y)/TiO sub(x) and Hetero TiO sub(x)/TiON/TiO sub(x) Triple Multilayer Frameworks

Advanced functional materials, 2012-02, Vol.22 (4), p.709-716

2012

Volltextzugriff (PDF)

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO x bipolar resistive switching

Scientific reports, 2018-06, Vol.8 (1), p.8532

2018

Volltextzugriff (PDF)

Roles of interfacial TiO x N 1 − x layer and TiN electrode on bipolar resistive switching in TiN / TiO 2 / TiN frameworks

Applied physics letters, 2010-06, Vol.96 (22), p.223502-223502-3

2010

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Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Current Applied Physics, 2014, 14(3), , pp.355-358

2014

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Multifunctional resistive switching behaviors employing various electroforming stepsElectronic supplementary information (ESI) available. See DOI: 10.1039/c5tc03303a

2016-01

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Revealing Al evaporation-assisted functions in solution-processed ZnO thin film transistorsElectronic supplementary information (ESI) available: The transfer characteristics of solution-processed ZnO TFTs evaporated by Al, the structural analyses of Al evaporated ZnO-TFTs with various deposition times, AES, TEM, EDS, and Vth shift under stress time data for ZnO thin films. See DOI: 10.1039/c4tc02096k

2014-11

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Resistive Switching Properties of a Polycrystalline TiO2 Memory Cell with a Tungsten Nitride (WN) Buffer Layer Inserted

Journal of the Korean Physical Society, 2008, 53(6), , pp.3685-3689

2008

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T cell microvilli constitute immunological synaptosomes that carry messages to antigen-presenting cells

Nature communications, 2018-09, Vol.9 (1), p.3630-19, Article 3630

2018

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Sodium Bicarbonate Therapy for the Prevention of Contrast-Induced Acute Kidney Injury: A Systematic Review and Meta-Analysis

Circulation Journal, 2012, Vol.76(9), pp.2255-2265

2012

Volltextzugriff (PDF)

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Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame

Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5−x/TiOxNy framework

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix

Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiO x /TiO y /TiO x and Hetero TiO x /TiON/TiO x Triple Multilayer Frameworks

Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments

Microlight‐Emitting Diodes: Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments (Small 49/2018)

Structural, morphological, compositional, and optical properties of single step electrodeposited Cu2ZnSnS4 (CZTS) thin films for solar cell application

Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

Multifunctional resistive switching behaviors employing various electroforming steps

Observation of bias-dependent noise sources in a TiO{sub x}/TiO{sub y} bipolar resistive switching frame

Revealing Al evaporation-assisted functions in solution-processed ZnO thin film transistors

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO sub(x)/TiO sub(y)/TiO sub(x) and Hetero TiO sub(x)/TiON/TiO sub(x) Triple Multilayer Frameworks

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO x bipolar resistive switching

Roles of interfacial TiO x N 1 − x layer and TiN electrode on bipolar resistive switching in TiN / TiO 2 / TiN frameworks

Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Multifunctional resistive switching behaviors employing various electroforming stepsElectronic supplementary information (ESI) available. See DOI: 10.1039/c5tc03303a

Resistive Switching Properties of a Polycrystalline TiO2 Memory Cell with a Tungsten Nitride (WN) Buffer Layer Inserted

T cell microvilli constitute immunological synaptosomes that carry messages to antigen-presenting cells

Sodium Bicarbonate Therapy for the Prevention of Contrast-Induced Acute Kidney Injury: A Systematic Review and Meta-Analysis

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