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Insulators for 2D nanoelectronics: the gap to bridge

Nature communications, 2020-07, Vol.11 (1), p.3385-3385, Article 3385

2020

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Bias-temperature instability in single-layer graphene field-effect transistors

Applied physics letters, 2014-10, Vol.105 (14), p.143507

2014

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Highly-stable black phosphorus field-effect transistors with low density of oxide traps

NPJ 2D materials and applications, 2017-12, Vol.1 (1), p.1-7, Article 23

2017

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Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures

Thin solid films, 2023-10, Vol.783, p.140058, Article 140058

2023

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Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

NPJ 2D materials and applications, 2024-02, Vol.8 (1), p.8-7, Article 8

2024

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Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport

Semiconductors (Woodbury, N.Y.), 2023-04, Vol.57 (4), p.211-215

2023

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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

NPJ 2D materials and applications, 2024-03, Vol.8 (1), p.23-10, Article 23

2024

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Microscopic calculation of the equation of state of nuclear matter and neutron star structure

Monthly notices of the Royal Astronomical Society. Letters, 2010-05, Vol.404 (1), p.L35-L39

2010

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Nature electronics, 2021-02, Vol.4 (2), p.98-108

2021

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Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer

Semiconductors (Woodbury, N.Y.), 2019-06, Vol.53 (6), p.833-837

2019

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Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)

Technical physics letters, 2018-12, Vol.44 (12), p.1188-1191

2018

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A Physical Model for the Hysteresis in MoS2 Transistors

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.972-978

2018

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Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Semiconductors (Woodbury, N.Y.), 2017-04, Vol.51 (4), p.444-448

2017

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Resonant electron tunneling and related charging phenomena in metal–oxide–p+-Si nanostructures

Technical physics letters, 2016-11, Vol.42 (11), p.1090-1093

2016

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ESTIMATE OF THE MAGNETIC FIELD STRENGTH IN HEAVY-ION COLLISIONS

International journal of modern physics. A, Particles and fields, gravitation, cosmology, 2009-12, Vol.24 (31), p.5925-5932

2009

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Transformation of a metal–insulator-silicon structure into a resonant-tunneling diode

Microelectronic engineering, 2013-09, Vol.109, p.270-273

2013

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TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

Current Applied Physics, 2015, 15(2), , pp.78-83

2015

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Reliability of next-generation field-effect transistors with transition metal dichalcogenides

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.5A.5-1-5A.5-6

2018

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Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1–2nm) fluoride layer

Thin solid films, 2013-10, Vol.545, p.580-583

2013

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Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.259-263

2015

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Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.5A-1-1-5A-1-6

2016

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Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

2020 Device Research Conference (DRC), 2020, p.1-2

2020

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A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.686-694

2013

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Recent progress on the accurate determination of the equation of state of neutron and nuclear matter

Journal of physics. Conference series, 2011-12, Vol.336 (1), p.012014-12

2011

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Insulators for 2D nanoelectronics: the gap to bridge

Bias-temperature instability in single-layer graphene field-effect transistors

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Effect of fluoride layer thickness on the leakage current in Au/CaF2/Si(111) heterostructures

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Microscopic calculation of the equation of state of nuclear matter and neutron star structure

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer

Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)

A Physical Model for the Hysteresis in MoS2 Transistors

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Resonant electron tunneling and related charging phenomena in metal–oxide–p+-Si nanostructures

ESTIMATE OF THE MAGNETIC FIELD STRENGTH IN HEAVY-ION COLLISIONS

Transformation of a metal–insulator-silicon structure into a resonant-tunneling diode

TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

Reliability of next-generation field-effect transistors with transition metal dichalcogenides

Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1–2nm) fluoride layer

Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices

Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators

Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Recent progress on the accurate determination of the equation of state of neutron and nuclear matter

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