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Efficient Solar Energy Conversion Using CaCu3Ti4O12 Photoanode for Photocatalysis and Photoelectrocatalysis

Scientific reports, 2016-01, Vol.6 (1), p.18557-18557, Article 18557

2016

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Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers

Journal of alloys and compounds, 2017-08, Vol.714, p.331-337

2017

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Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure

Infrared physics & technology, 2015-07, Vol.71, p.127-130

2015

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Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Nanotechnology, 2013-01, Vol.24 (3), p.035704-1-10

2013

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Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

Electronics letters, 2016-05, Vol.52 (10), p.827-828

2016

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Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells

Synthetic metals, 2014-05, Vol.191, p.6-11

2014

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Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Nanotechnology, 2011-10, Vol.22 (40), p.405702-1-6

2011

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Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material

Journal of optics (2010), 2017-02, Vol.19 (2), p.25401

2017

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Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding material

Journal of luminescence, 2014-04, Vol.148, p.243-248

2014

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InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Journal of crystal growth, 2012-04, Vol.344 (1), p.45-50

2012

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Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Journal of alloys and compounds, 2014-12, Vol.615, p.683-686

2014

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Thermal induced carrier’s transfer in bimodal size distribution InAs/GaAs quantum dots

Results in physics, 2018-06, Vol.9, p.904-905

2018

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Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well

Condensed matter physics, 2015-01, Vol.18 (3), p.33005

2015

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Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

Journal of luminescence, 2014-01, Vol.145, p.595-599

2014

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Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Journal of luminescence, 2007-12, Vol.127 (2), p.741-746

2007

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Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing

Nanotechnology, 2006-08, Vol.17 (15), p.3707-3709

2006

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InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011-11, Vol.13 (11), p.5809-5813

2011

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Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

Infrared physics & technology, 2019-03, Vol.97, p.376-380

2019

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Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

Nanotechnology, 2008-07, Vol.19 (28), p.285715-285715 (6)

2008

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Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V2O5 alternating layers structure

Physica. B, Condensed matter, 2017-10, Vol.522, p.26-30

2017

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Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V 2 O 5 alternating layers structure

Physica. B, Condensed matter, 2017-10, Vol.522, p.26-30

2017

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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Applied physics. A, Materials science & processing, 2005-09, Vol.81 (4), p.813-816

2005

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Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Journal of applied physics, 2020-12, Vol.128 (24)

2020

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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Applied physics. A, Materials science & processing, 2004-08, Vol.79 (3), p.587-591

2004

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Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V^sub 2^O^sub 5^ alternating layers structure

Physica. B, Condensed matter, 2017-10, Vol.522, p.26

2017

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Efficient Solar Energy Conversion Using CaCu3Ti4O12 Photoanode for Photocatalysis and Photoelectrocatalysis

Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers

Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material

Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In)GaAs surrounding material

InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Thermal induced carrier’s transfer in bimodal size distribution InAs/GaAs quantum dots

Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well

Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Post-growth engineering of InAs/GaAs quantum dots' band-gap using proton implantation and annealing

InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V2O5 alternating layers structure

Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V 2 O 5 alternating layers structure

Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V^sub 2^O^sub 5^ alternating layers structure

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