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Painless thyroiditis mimicking relapse of hyperthyroidism during or after potassium iodide or thionamide therapy for Graves’ disease resulting in remission

Endocrine Journal, 2023, Vol.70(2), pp.207-222

2023

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Iodide-sensitive Graves’ hyperthyroidism and the strategy for resistant or escaped patients during potassium iodide treatment

Endocrine Journal, 2022, Vol.69(8), pp.983-997

2022

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Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Applied physics letters, 2014-02, Vol.104 (6)

2014

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High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water

Applied physics letters, 2018-02, Vol.112 (6)

2018

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The long-term follow-up of patients with thionamide-treated Graves’ hyperthyroidism

Endocrine Journal, 2019, Vol.66(6), pp.535-545

2019

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Influence of pulse frequency on synthesis of nano and submicrometer spherical particles by pulsed laser melting in liquid

Applied surface science, 2018-03, Vol.435, p.529-534

2018

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H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

Applied physics letters, 2017-03, Vol.110 (13)

2017

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Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Nanotechnology, 2021-01, Vol.32 (5), p.055702-055702

2021

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Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces

ACS applied materials & interfaces, 2020-12, Vol.12 (51), p.57619-57626

2020

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Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (4), p.45102

2020

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Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors

Materials science in semiconductor processing, 2022-03, Vol.139, p.106370, Article 106370

2022

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Silicon twisted cone structure produced by optical vortex pulse with structure evaluation by radiation hydrodynamic simulation

Scientific reports, 2020-12, Vol.10 (1), p.20512-20512, Article 20512

2020

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Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Applied physics letters, 2015-12, Vol.107 (26)

2015

Volltextzugriff (PDF)

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

Materials science in semiconductor processing, 2023-06, Vol.160, p.107433, Article 107433

2023

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Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Applied physics letters, 2013-02, Vol.102 (5)

2013

Volltextzugriff (PDF)

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

ACS applied materials & interfaces, 2018-07, Vol.10 (29), p.24590-24597

2018

Volltextzugriff (PDF)

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Materials science forum, 2019-07, Vol.963, p.412-415

2019

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Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation

Diamond and related materials, 2019-05, Vol.95, p.166-173

2019

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Bonding of lithium niobate to silicon in ambient air using laser irradiation

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8S3), p.8-08RB09

2016

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Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.679-686

2021

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Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Materials science forum, 2019-07, Vol.963, p.403-406

2019

Volltextzugriff (PDF)

Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Materials science in semiconductor processing, 2017-11, Vol.70, p.193-196

2017

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Direct growth of graphene on SiC(0001) by KrF-excimer-laser irradiation

Applied physics letters, 2016-02, Vol.108 (9), p.093107-093107

2016

Volltextzugriff (PDF)

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Painless thyroiditis mimicking relapse of hyperthyroidism during or after potassium iodide or thionamide therapy for Graves’ disease resulting in remission

Iodide-sensitive Graves’ hyperthyroidism and the strategy for resistant or escaped patients during potassium iodide treatment

Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water

The long-term follow-up of patients with thionamide-treated Graves’ hyperthyroidism

Influence of pulse frequency on synthesis of nano and submicrometer spherical particles by pulsed laser melting in liquid

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors

Silicon twisted cone structure produced by optical vortex pulse with structure evaluation by radiation hydrodynamic simulation

Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation

Bonding of lithium niobate to silicon in ambient air using laser irradiation

Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics

Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Direct growth of graphene on SiC(0001) by KrF-excimer-laser irradiation

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