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Epitaxial GeSn: impact of process conditions on material quality

Semiconductor science and technology, 2018-10, Vol.33 (11), p.114010

2018

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Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Applied physics letters, 2015-05, Vol.106 (18)

2015

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Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Thin solid films, 2016-03, Vol.602, p.7-12

2016

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Selective epitaxial growth of Ge1−Sn on Si by using metal-organic chemical vapor deposition

Journal of crystal growth, 2017-06, Vol.468, p.614-619

2017

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Formation and characterization of locally strained Ge1−Sn /Ge microstructures

Thin solid films, 2014-04, Vol.557, p.164-168

2014

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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping

Thin solid films, 2018-01, Vol.645, p.57-63

2018

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In situ phosphorus-doped Ge1−xSnx layers grown using low-temperature metal-organic chemical vapor deposition

Semiconductor science and technology, 2017-10, Vol.32 (12)

2017

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In situ phosphorus-doped Ge 1− x Sn x layers grown using low-temperature metal-organic chemical vapor deposition

Semiconductor science and technology, 2017-12, Vol.32 (12), p.124001

2017

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Selective growth of Ge1−xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S)

2018

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Selective epitaxial growth of Ge1−xSnx on Si by using metal-organic chemical vapor deposition

Journal of crystal growth, 2017-06, Vol.468, p.614-619

2017

Volltextzugriff (PDF)

Selective growth of Ge 1− x Sn x epitaxial layer on patterned SiO 2 /Si substrate by metal–organic chemical vapor deposition

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S), p.1

2018

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Selective growth of Ge^sub 1−x^Sn^sub x^ epitaxial layer on patterned SiO^sub 2^/Si substrate by metal–organic chemical vapor deposition

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.01AC05

2018

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Selective epitaxial growth of Ge^sub 1-x^Sn^sub x^sub on Si by using metal-organic chemical vapor deposition

Journal of crystal growth, 2017-06, Vol.468, p.614

2017

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Characterization of crystallinity of Ge1- x Sn x epitaxial layers grown using metal-organic chemical vapor deposition

Thin solid films, 2016-03, Vol.602, p.7-12

2016

Volltextzugriff (PDF)

Characterization of locally strained Ge1− x Sn x /Ge fine structures by synchrotron X-ray microdiffraction

Applied physics letters, 2015-05, Vol.106 (18)

2015

Volltextzugriff (PDF)

Formation and characterization of locally strained Ge1−xSnx/Ge microstructures

Thin solid films, 2014, Vol.557, p.164-168

2014

Volltextzugriff (PDF)

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge 1−X Sn x Fine Structures by Using Synchrotron X-ray Microdiffraction

ECS transactions, 2016-08, Vol.75 (8), p.769-775

2016

Volltextzugriff (PDF)

Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures

Thin solid films, 2014-04, Vol.557, p.164-168

2014

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(Invited) Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits

ECS transactions, 2015, Vol.69 (10), p.89-98

2015

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Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin

ECS solid state letters, 2015-06, Vol.4 (8), p.P59-P61

2015

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Characterization of Local Strain Structures in Heteroepitaxial Ge 1−x Sn x /Ge Microstructures by Using Microdiffraction Method

ECS transactions, 2013-08, Vol.58 (9), p.185-192

2013

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Evaluation of User Support of a Hemispherical Sub-display with GUI Pointing Functions

Human-Computer Interaction. Interaction Techniques and Environments, p.436-445

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Effect of fluid property on liquid flow rate measurement by MEMS sensor

The Proceedings of the Symposium on Micro-Nano Science and Technology, 2018, Vol.2018.9, p.30

2018

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Heat transfer analysis around thermal flow sensor for liquid

The Proceedings of the Symposium on Micro-Nano Science and Technology, 2017, Vol.2017.8, p.PN-11

2017

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Epitaxial GeSn: impact of process conditions on material quality

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Selective epitaxial growth of Ge1−Sn on Si by using metal-organic chemical vapor deposition

Formation and characterization of locally strained Ge1−Sn /Ge microstructures

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping

In situ phosphorus-doped Ge1−xSnx layers grown using low-temperature metal-organic chemical vapor deposition

In situ phosphorus-doped Ge 1− x Sn x layers grown using low-temperature metal-organic chemical vapor deposition

Selective growth of Ge1−xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

Selective epitaxial growth of Ge1−xSnx on Si by using metal-organic chemical vapor deposition

Selective growth of Ge 1− x Sn x epitaxial layer on patterned SiO 2 /Si substrate by metal–organic chemical vapor deposition

Selective growth of Ge^sub 1−x^Sn^sub x^ epitaxial layer on patterned SiO^sub 2^/Si substrate by metal–organic chemical vapor deposition

Selective epitaxial growth of Ge^sub 1-x^Sn^sub x^sub on Si by using metal-organic chemical vapor deposition

Characterization of crystallinity of Ge1- x Sn x epitaxial layers grown using metal-organic chemical vapor deposition

Characterization of locally strained Ge1− x Sn x /Ge fine structures by synchrotron X-ray microdiffraction

Formation and characterization of locally strained Ge1−xSnx/Ge microstructures

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge 1−X Sn x Fine Structures by Using Synchrotron X-ray Microdiffraction

Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures

(Invited) Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits

Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin

Characterization of Local Strain Structures in Heteroepitaxial Ge 1−x Sn x /Ge Microstructures by Using Microdiffraction Method

Evaluation of User Support of a Hemispherical Sub-display with GUI Pointing Functions

Effect of fluid property on liquid flow rate measurement by MEMS sensor

Heat transfer analysis around thermal flow sensor for liquid

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