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Influence of Surface Orientation on Electrochemical Properties of Boron-Doped Diamond

Journal of physical chemistry. C, 2019-03, Vol.123 (9), p.5336-5344

2019

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Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets

Applied physics express, 2024-07, Vol.17 (7), p.74002

2024

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In Situ Spectroscopic Study on the Surface Hydroxylation of Diamond Electrodes

Analytical chemistry (Washington), 2019-04, Vol.91 (8), p.4980-4986

2019

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Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1088

2023

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Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

IEEE access, 2024, Vol.12, p.12458-12464

2024

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Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

MRS communications, 2017-09, Vol.7 (3), p.541-550

2017

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Origin of Low-frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality

IEEE access, 2023-01, Vol.11, p.1-1

2023

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Electrical Conductivity Enhancement of PTFE (Teflon) Induced by Homogeneous Low Voltage Electron Beam Irradiation (HLEBI)

Materials transactions, 2012, Vol.53 (5), p.940-945

2012

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Stability and electronic structures of isoelectronic impurity complexes in Si: First-principles study

Japanese Journal of Applied Physics, 2016-10, Vol.55 (10), p.101301

2016

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Mass Gain of Carbon Fiber Reinforced Polyimide (CFRP) by Dipping in Hot Distilled Water

Materials transactions, 2012, Vol.53 (2), p.435-439

2012

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Surface Hydrogenation of Boron-Doped Diamond Electrodes by Cathodic Reduction

Analytical chemistry (Washington), 2017-11, Vol.89 (21), p.11341-11347

2017

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First-Principles Study on the Peculiar Water Environment in a Hydrate-Melt Electrolyte

The journal of physical chemistry letters, 2019-10, Vol.10 (20), p.6301-6305

2019

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First-principles calculation of electronic properties of isoelectronic impurity complexes in Si

Applied physics express, 2015-08, Vol.8 (8), p.81301

2015

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Electrochemical properties of fluorinated boron-doped diamond electrodes via fluorine-containing plasma treatment

Physical chemistry chemical physics : PCCP, 2019-06, Vol.21 (25), p.13788-13794

2019

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Boiling heat transfer and flow characteristic of R32 inside a horizontal small-diameter microfin tube

International journal of refrigeration, 2018-11, Vol.95, p.73-82

2018

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Electrochemical properties of fluorinated boron-doped diamond electrodes fluorine-containing plasma treatment

Physical chemistry chemical physics : PCCP, 2019-06, Vol.21 (25), p.13788-13794

2019

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TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs

Japanese Journal of Applied Physics, 2024-09, Vol.63 (9), p.94001

2024

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Resonance-enhanced tunneling current through Si-p/n junction with additional dopants: theoretical study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (6), p.61004

2019

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High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs

Japanese Journal of Applied Physics, 2024-07, Vol.63 (7), p.71002

2024

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Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

Materials science in semiconductor processing, 2017-11, Vol.70, p.279-282

2017

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Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1054

2023

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Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SIIE02

2020

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Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure

Japanese Journal of Applied Physics, 2024-07, Vol.63 (7), p.74001

2024

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ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBA01

2021

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Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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Influence of Surface Orientation on Electrochemical Properties of Boron-Doped Diamond

Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets

In Situ Spectroscopic Study on the Surface Hydroxylation of Diamond Electrodes

Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

Origin of Low-frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality

Electrical Conductivity Enhancement of PTFE (Teflon) Induced by Homogeneous Low Voltage Electron Beam Irradiation (HLEBI)

Stability and electronic structures of isoelectronic impurity complexes in Si: First-principles study

Mass Gain of Carbon Fiber Reinforced Polyimide (CFRP) by Dipping in Hot Distilled Water

Surface Hydrogenation of Boron-Doped Diamond Electrodes by Cathodic Reduction

First-Principles Study on the Peculiar Water Environment in a Hydrate-Melt Electrolyte

First-principles calculation of electronic properties of isoelectronic impurity complexes in Si

Electrochemical properties of fluorinated boron-doped diamond electrodes via fluorine-containing plasma treatment

Boiling heat transfer and flow characteristic of R32 inside a horizontal small-diameter microfin tube

Electrochemical properties of fluorinated boron-doped diamond electrodes fluorine-containing plasma treatment

TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs

Resonance-enhanced tunneling current through Si-p/n junction with additional dopants: theoretical study

High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs

Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices

Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure

ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium

Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation

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