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Amorphous gallium indium zinc oxide thin film transistors:Sensitive to oxygen molecules

Applied physics letters, 2007-05, Vol.90 (19), p.192101-192101-3

2007

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Nature materials, 2012-02, Vol.11 (4), p.301-305

2012

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Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Advanced materials (Weinheim), 2012-05, Vol.24 (19), p.2631-2636

2012

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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Advanced materials (Weinheim), 2014-11, Vol.26 (41), p.7102-7109

2014

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Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

Advanced materials (Weinheim), 2010-12, Vol.22 (48), p.5512-5516

2010

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Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2071-2077

2008

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Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics

IEEE electron device letters, 2010-03, Vol.31 (3), p.231-233

2010

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Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Advanced functional materials, 2009-05, Vol.19 (10), p.1587-1593

2009

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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Applied physics letters, 2008-08, Vol.93 (5), p.053501-053501-3

2008

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Impact of transparent electrode on photoresponse of ZnO-based phototransistor

Applied physics letters, 2013-12, Vol.103 (25)

2013

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High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Applied physics letters, 2008-08, Vol.93 (5)

2008

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Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Applied physics letters, 2008-10, Vol.93 (17)

2008

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Short channel device performance of amorphous InGaZnO thin film transistor

Applied physics letters, 2011-08, Vol.99 (8), p.082104-082104-3

2011

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Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications

IEEE electron device letters, 2010-10, Vol.31 (10), p.1128-1130

2010

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Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Applied physics letters, 2008-11, Vol.93 (18)

2008

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Source/Drain Series-Resistance Effects in Amorphous Gallium-Indium Zinc-Oxide Thin Film Transistors

IEEE electron device letters, 2008-08, Vol.29 (8), p.879-881

2008

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Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2988-3000

2010

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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Applied physics letters, 2009-09, Vol.95 (13), p.132101-132101-3

2009

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Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-09, Vol.31 (5)

2013

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Short Channel Characteristics of Gallium-Indium-Zinc-Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

IEEE electron device letters, 2008-06, Vol.29 (6), p.549-552

2008

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Double gate GaInZnO thin film transistors

Applied physics letters, 2008-08, Vol.93 (6), p.063505-063505-3

2008

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Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics

IEEE electron device letters, 2008-12, Vol.29 (12), p.1292-1295

2008

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Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

Applied physics letters, 2011-02, Vol.98 (6), p.063502-063502-3

2011

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High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

Journal of the Electrochemical Society, 2009, Vol.156 (3), p.H184

2009

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Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors

Journal of the Electrochemical Society, 2010, Vol.157 (3), p.H272

2010

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Amorphous gallium indium zinc oxide thin film transistors:Sensitive to oxygen molecules

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Impact of transparent electrode on photoresponse of ZnO-based phototransistor

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Short channel device performance of amorphous InGaZnO thin film transistor

Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Source/Drain Series-Resistance Effects in Amorphous Gallium-Indium Zinc-Oxide Thin Film Transistors

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors

Short Channel Characteristics of Gallium-Indium-Zinc-Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

Double gate GaInZnO thin film transistors

Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics

Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors

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