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Easy adjustment structure and method for realizing InP based polarization beam splitter via Pockels effect dependence on crystal orientation

Japanese Journal of Applied Physics, 2016-08, Vol.55 (8S3), p.8-08RB04

2016

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High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.183-188

2015

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Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission

Journal of lightwave technology, 2013-02, Vol.31 (4), p.602-608

2013

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Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2011-01, Vol.315 (1), p.64-67

2011

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Highly reliable 1.5-μm DFB laser with high-mesa SIBH structure

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.456-461

2007

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Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD

Thin solid films, 2013-09, Vol.542, p.317-326

2013

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Highly Reliable 1.5-[mu]m DFB Laser With High-Mesa SIBH Structure

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.456-461

2007

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Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520

Japanese Journal of Applied Physics, 1992-12, Vol.31 (12S), p.4508

1992

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Flip-Chip Interconnection Technique for Beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Journal of lightwave technology, 2016-01, Vol.34 (2), p.296-302

2016

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Transmitter Optical Subassembly Using a Polarization Beam Combiner for 100 Gbit/s Ethernet over 40-km Transmission

Journal of lightwave technology, 2015-05, Vol.33 (10), p.1985-1992

2015

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Tunnel Junction with Autodoped AlGaAs on InP

Journal of electronic materials, 2013-10, Vol.42 (10), p.2881-2887

2013

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Compact Flip-Chip Interconnection 112-Gbit/s EADFB Laser Array Module With High Eye-Mask Margin

Journal of lightwave technology, 2014-01, Vol.32 (1), p.115-121

2014

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A flat-output widely tunable laser based on parallel-ring resonator integrated with electroabsorption modulator

Optics express, 2012-12, Vol.20 (26), p.B485-B492

2012

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Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure

IEEE journal of selected topics in quantum electronics, 2011-11, Vol.17 (6), p.1505-1512

2011

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A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1191-1197

2011

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Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source

Optics express, 2013-01, Vol.21 (1), p.182-189

2013

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Compact 100 Gb/s Ethernet Transmitter Optical Sub-Assembly Using Polarization Beam Combiner

IEEE photonics technology letters, 2013-12, Vol.25 (24), p.2416-2418

2013

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1.55-μm buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs substrate

IEEE journal of quantum electronics, 2001-09, Vol.37 (9), p.1194-1202

2001

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Correlation between Fe–Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2320-2324

2003

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Improvement in Threshold Voltage of 1.55-µm Buried-Heterostructure Vertical-Cavity Surface-Emitting Laser

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4L), p.L552

2005

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Analysis of interior degradation of a laser waveguide using an OBIC monitor

Microelectronics and reliability, 2007-12, Vol.47 (12), p.2135-2140

2007

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Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy

Journal of crystal growth, 1992-08, Vol.121 (4), p.579-586

1992

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A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V

IEEE photonics technology letters, 2005-01, Vol.17 (1), p.46-48

2005

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Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1432

1998

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Lateral band-gap control of InGaAsP multiple quantum wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array

Applied physics letters, 1994-02, Vol.64 (8), p.983-985

1994

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Easy adjustment structure and method for realizing InP based polarization beam splitter via Pockels effect dependence on crystal orientation

High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique

Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission

Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy

Highly reliable 1.5-μm DFB laser with high-mesa SIBH structure

Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD

Highly Reliable 1.5-[mu]m DFB Laser With High-Mesa SIBH Structure

Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520

Flip-Chip Interconnection Technique for Beyond 100-Gb/s (4 × 25.8-Gb/s) EADFB Laser Array Transmitter

Transmitter Optical Subassembly Using a Polarization Beam Combiner for 100 Gbit/s Ethernet over 40-km Transmission

Tunnel Junction with Autodoped AlGaAs on InP

Compact Flip-Chip Interconnection 112-Gbit/s EADFB Laser Array Module With High Eye-Mask Margin

A flat-output widely tunable laser based on parallel-ring resonator integrated with electroabsorption modulator

Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure

A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver

Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source

Compact 100 Gb/s Ethernet Transmitter Optical Sub-Assembly Using Polarization Beam Combiner

1.55-μm buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs substrate

Correlation between Fe–Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators

Improvement in Threshold Voltage of 1.55-µm Buried-Heterostructure Vertical-Cavity Surface-Emitting Laser

Analysis of interior degradation of a laser waveguide using an OBIC monitor

Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy

A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V

Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP

Lateral band-gap control of InGaAsP multiple quantum wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array

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