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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Semiconductor science and technology, 2016-05, Vol.31 (6), p.63002

Ielmini, Daniele

2016

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Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

Physical review. B, Condensed matter and materials physics, 2008-07, Vol.78 (3), Article 035308

Ielmini, Daniele

2008

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Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4309-4317

Ielmini, D.

2011

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IEEE_Xplore

Emerging neuromorphic devices

Nanotechnology, 2020-02, Vol.31 (9), p.92001-092001

2020

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Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature communications, 2019-01, Vol.10 (1), p.81-81, Article 81

2019

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Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices

Nature communications, 2020-03, Vol.11 (1), p.1510-1510, Article 1510

2020

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In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks

Nature materials, 2022-02, Vol.21 (2), p.195-202

2022

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Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Journal of applied physics, 2007-09, Vol.102 (5)

2007

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Device and Circuit Architectures for In‐Memory Computing

Advanced intelligent systems, 2020-07, Vol.2 (7), p.n/a

2020

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Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

1, 2016

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Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Faraday discussions, 2019-02, Vol.213, p.87-98

2019

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Physical origin of the resistance drift exponent in amorphous phase change materials

Applied physics letters, 2011-06, Vol.98 (24), p.243506-243506-3

2011

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Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Microelectronic engineering, 2018-04, Vol.190, p.44-53

Ielmini, Daniele

2018

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Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.308-315

2007

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IEEE_Xplore

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Advanced materials (Weinheim), 2014-06, Vol.26 (23), p.3885-3892

2014

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In-Memory Computing with Resistive Memory Circuits: Status and Outlook

Electronics (Basel), 2021-05, Vol.10 (9), p.1063

2021

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Memristive tonotopic mapping with volatile resistive switching memory devices

Nature communications, 2024-04, Vol.15 (1), p.2812-2812

2024

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Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2912-2919

2014

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IEEE_Xplore

Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1831-1838

2015

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IEEE_Xplore

Memristive and CMOS Devices for Neuromorphic Computing

Materials, 2020-01, Vol.13 (1), p.166

2020

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Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Advanced materials (Weinheim), 2018-10, Vol.30 (43), p.e1801187-n/a

2018

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Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Applied physics letters, 2010-02, Vol.96 (5)

2010

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Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

Applied physics letters, 2007-05, Vol.90 (19), p.192102-192102-3

2007

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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio-Part I: Memory Devices

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.115-121

2018

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A Generalized Block-Matrix Circuit for Closed-Loop Analog In-Memory Computing

IEEE journal on exploratory solid-state computational devices and circuits, 2023-06, Vol.9 (1), p.47-55

2023

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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Emerging neuromorphic devices

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices

In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks

Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Device and Circuit Architectures for In‐Memory Computing

Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

Physical origin of the resistance drift exponent in amorphous phase change materials

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

In-Memory Computing with Resistive Memory Circuits: Status and Outlook

Memristive tonotopic mapping with volatile resistive switching memory devices

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

Memristive and CMOS Devices for Neuromorphic Computing

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio-Part I: Memory Devices

A Generalized Block-Matrix Circuit for Closed-Loop Analog In-Memory Computing

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