UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Logic Computation in Phase Change Materials by Threshold and Memory Switching

Advanced materials (Weinheim), 2013-11, Vol.25 (41), p.5975-5980

2013

Volltextzugriff (PDF)

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Advanced materials (Weinheim), 2013-03, Vol.25 (10), p.1474-1478

2013

Volltextzugriff (PDF)

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Scientific reports, 2017-07, Vol.7 (1), p.5288-10, Article 5288

2017

Volltextzugriff (PDF)

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Journal of computational electronics, 2017-12, Vol.16 (4), p.1121-1143

2017

Volltextzugriff (PDF)

Brain-inspired computing via memory device physics

APL materials, 2021-05, Vol.9 (5), p.050702-050702-21

2021

Volltextzugriff (PDF)

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Nanotechnology, 2011-06, Vol.22 (25), p.254022-254022

2011

Volltextzugriff (PDF)

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)-Part I: Experimental Study

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3240-3245

2024

Volltextzugriff (PDF)

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)-Part II: Physics-Based Modeling

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3246-3251

2024

Volltextzugriff (PDF)

A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing

Nature communications, 2023-03, Vol.14 (1), p.1565-1565, Article 1565

2023

Volltextzugriff (PDF)

Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1-7

2024

Volltextzugriff (PDF)

Materials challenges and opportunities for brain-inspired computing

MRS bulletin, 2021-10, Vol.46 (10), p.978-986

2021

Volltextzugriff (PDF)

Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1575-1581

2022

Volltextzugriff (PDF)

HfO2-based resistive switching memory devices for neuromorphic computing

Neuromorphic computing and engineering, 2022-12, Vol.2 (4)

2022

Volltextzugriff (PDF)

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.193-200

2009

Volltextzugriff (PDF)

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.186-192

2009

Volltextzugriff (PDF)

Spike-timing dependent plasticity in a transistor-selected resistive switching memory

Nanotechnology, 2013-09, Vol.24 (38), p.384012-384012

2013

Volltextzugriff (PDF)

Bipolar switching in chalcogenide phase change memory

Scientific reports, 2016-07, Vol.6 (1), p.29162-29162, Article 29162

2016

Volltextzugriff (PDF)

Nanowire-based resistive switching memories: devices, operation and scaling

Journal of physics. D, Applied physics, 2013-02, Vol.46 (7), p.74006-1-12

2013

Volltextzugriff (PDF)

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

APL materials, 2019-08, Vol.7 (8), p.081120-081120-10

2019

Volltextzugriff (PDF)

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1040-1047

2009

Volltextzugriff (PDF)

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4309-4317

Ielmini, D.

2011

Volltextzugriff (PDF)

Resistance transition in metal oxides induced by electronic threshold switching

Applied physics letters, 2009-02, Vol.94 (6), p.063511-063511-3

2009

Volltextzugriff (PDF)

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1712-1720

2009

Volltextzugriff (PDF)

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part I: Experimental Study

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1070-1077

2009

Volltextzugriff (PDF)

In-memory computing for machine learning and deep learning

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

Volltextzugriff (PDF)

1 – 25 von 273

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(121)
Mit Volltextzugriff
(249)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(193)
Technology
(175)
Engineering
(163)
Engineering, Electrical & Electronic
(163)
Physical Sciences
(108)
Physics
(107)
Physics, Applied
(93)
Integrated Circuits
(65)
Phase Change Materials
(63)
Electronics
(60)
Exact Sciences And Technology
(59)
Applied Sciences
(57)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(55)
Nonvolatile Memory
(53)
Resistance
(52)
Integrated Circuits By Function
(50)
Materials Science
(44)
Phase Change Memory
(44)
Switches
(44)
Computer Science
(41)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Logic Computation in Phase Change Materials by Threshold and Memory Switching

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Brain-inspired computing via memory device physics

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)-Part I: Experimental Study

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)-Part II: Physics-Based Modeling

A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing

Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks

Materials challenges and opportunities for brain-inspired computing

Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks

HfO2-based resistive switching memory devices for neuromorphic computing

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

Spike-timing dependent plasticity in a transistor-selected resistive switching memory

Bipolar switching in chalcogenide phase change memory

Nanowire-based resistive switching memories: devices, operation and scaling

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Resistance transition in metal oxides induced by electronic threshold switching

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part I: Experimental Study

In-memory computing for machine learning and deep learning

Suchergebnisse filtern