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Sintering Temperature Dependence of Thermoelectric Performance and Crystal Phase of Calcium Cobalt Oxides

Journal of the American Ceramic Society, 2010-10, Vol.93 (10), p.3046-3048

2010

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Growth of Cu(In,Ga)Se2 Films Selenized Using Dimethylselenium

Materials transactions, 2012-01, Vol.53 (6), p.1169-1171

2012

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Effect of Vanadium Doping on Structure and Properties of ZnSe Films Prepared by Metal-Organic Vapor Phase Epitaxy

Materials transactions, 2009-04, Vol.50 (4), p.719-722

2009

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Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films

IEICE transactions on electronics, 2012-01, Vol.E95.C (7), p.1304-1306

2012

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Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1602-1606

2007

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MOVPE growth, and magnetic and crystallographic studies of Zn1−V Se

Journal of crystal growth, 2007-01, Vol.298, p.453-456

2007

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Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE

Materials transactions, 2005-08, Vol.46 (8), p.1908-1910

2005

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Metalorganic vapor Phase Epitaxy of Sb-doped ZnSe

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5A), p.L540-L542

1997

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Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2000-06, Vol.214, p.529-532

2000

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Deep-level transient spectroscopy of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, 1995, Vol.34 (7A), p.L827-L829

1995

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MOVPE growth, and magnetic and crystallographic studies of Zn1-xVxSe

Journal of crystal growth, 2007, Vol.298, p.453-456

2007

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Diffusion length of holes in n-ZnSe measured by Schottky barrier photovoltage method

Japanese Journal of Applied Physics, 1994, Vol.33 (4A), p.1835-1836

1994

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Heteroepitaxial growth of CdTe films on (1 0 0) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy

Journal of crystal growth, 2008-07, Vol.310 (15), p.3440-3442

2008

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MOVPE growth, and magnetic and crystallographic studies of Zn 1− x V x Se

Journal of crystal growth, 2007, Vol.298, p.453-456

2007

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Sb-treatment effect of GaAs substrate on Sb-doped Cd1-xMnxTe growth by MOVPE

Physica status solidi. B. Basic research, 2007, Vol.244 (5), p.1691-1693

2007

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Voltage-current hysteretic characteristic in a Ni-Cd1-xMnxTe structure

Journal of alloys and compounds, 2008-01, Vol.449 (1-2), p.188-190

2008

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Sb‐treatment effect of GaAs substrate on Sb‐doped Cd 1– x Mn x Te growth by MOVPE

physica status solidi (b), 2007-05, Vol.244 (5), p.1691-1693

2007

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Sb-treatment effect of GaAs substrate on Sb-doped Cd1-x Mnx Te growth by MOVPE

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1691-1693

2007

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Voltage–current hysteretic characteristic in a Ni–Cd l− x Mn x Te structure

Journal of alloys and compounds, 2008, Vol.449 (1), p.188-190

2008

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Voltage–current hysteretic characteristic in a Ni–Cdl−Mn Te structure

Journal of alloys and compounds, 2008-01, Vol.449 (1-2), p.188-190

2008

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Characterization of a Large‐Scale Nondoped YBa 2 Cu 3 O 7− x Superconductor Prepared by Plastic Forming Without High‐Pressure Molding

Journal of the American Ceramic Society, 2007-07, Vol.90 (7), p.2032-2037

2007

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Characterization of a Large-Scale Nondoped YBa sub(2)Cu sub(3)O sub(7-x) Superconductor Prepared by Plastic Forming Without High-Pressure Molding

Journal of the American Ceramic Society, 2007-07, Vol.90 (7), p.2032-2037

2007

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Crystal growth of vanadium-doped ZnSe using triethoxyvanadyl by metal-organic vapor phase epitaxy

IEICE Electronics Express, 2008-01, Vol.5 (3), p.120-124

2008

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Energy bandgap and lattice constant contours of II–VI quaternary alloys

Journal of electronic materials, 1980-09, Vol.9 (5), p.869-882

Ido, Toshiyuki

1980

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Characterization of a Large-Scale Nondoped YBa2Cu3O7−x Superconductor Prepared by Plastic Forming Without High-Pressure Molding

Journal of the American Ceramic Society, 2007-07, Vol.90 (7), p.2032-2037

2007

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Sintering Temperature Dependence of Thermoelectric Performance and Crystal Phase of Calcium Cobalt Oxides

Growth of Cu(In,Ga)Se2 Films Selenized Using Dimethylselenium

Effect of Vanadium Doping on Structure and Properties of ZnSe Films Prepared by Metal-Organic Vapor Phase Epitaxy

Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films

Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe

MOVPE growth, and magnetic and crystallographic studies of Zn1−V Se

Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE

Metalorganic vapor Phase Epitaxy of Sb-doped ZnSe

Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy

Deep-level transient spectroscopy of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy

MOVPE growth, and magnetic and crystallographic studies of Zn1-xVxSe

Diffusion length of holes in n-ZnSe measured by Schottky barrier photovoltage method

Heteroepitaxial growth of CdTe films on (1 0 0) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy

MOVPE growth, and magnetic and crystallographic studies of Zn 1− x V x Se

Sb-treatment effect of GaAs substrate on Sb-doped Cd1-xMnxTe growth by MOVPE

Voltage-current hysteretic characteristic in a Ni-Cd1-xMnxTe structure

Sb‐treatment effect of GaAs substrate on Sb‐doped Cd 1– x Mn x Te growth by MOVPE

Sb-treatment effect of GaAs substrate on Sb-doped Cd1-x Mnx Te growth by MOVPE

Voltage–current hysteretic characteristic in a Ni–Cd l− x Mn x Te structure

Voltage–current hysteretic characteristic in a Ni–Cdl−Mn Te structure

Characterization of a Large‐Scale Nondoped YBa 2 Cu 3 O 7− x Superconductor Prepared by Plastic Forming Without High‐Pressure Molding

Characterization of a Large-Scale Nondoped YBa sub(2)Cu sub(3)O sub(7-x) Superconductor Prepared by Plastic Forming Without High-Pressure Molding

Crystal growth of vanadium-doped ZnSe using triethoxyvanadyl by metal-organic vapor phase epitaxy

Energy bandgap and lattice constant contours of II–VI quaternary alloys

Characterization of a Large-Scale Nondoped YBa2Cu3O7−x Superconductor Prepared by Plastic Forming Without High-Pressure Molding

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