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Nd } Fe } N } Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission

IEEE transactions on magnetics, 2019-10, Vol.55 (10), p.1-5

2019

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High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

CrystEngComm, 2017, Vol.19 (8), p.124-129

2017

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Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10306

2018

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Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd–Fe–N magnetic material

AIP advances, 2020-02, Vol.10 (2), p.025121-025121-5

2020

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Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer

IEEE electron device letters, 2010-09, Vol.31 (9), p.945-947

2010

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Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JB05-08JB05-4

2013

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Equivalent circuit modeling in GaN wireless power transmission including stray inductance and capacitance by measuring radiated emission

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1046

2022

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Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)

Journal of crystal growth, 2025-01, Vol.650, p.127980, Article 127980

2025

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Study on AlGaN/GaN growth on carbonized Si substrate

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EH09-5

2014

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Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Crystal research and technology (1979), 2024-07, Vol.59 (7), p.n/a

2024

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InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication

Japanese Journal of Applied Physics, 2006-01, Vol.45 (1L), p.L102

2006

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Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBE01

2021

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Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2334

2007

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Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2000-01, Vol.39 (1A), p.L16-L18

2000

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Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal-organic chemical vapor deposition

CrystEngComm, 2015-01, Vol.17 (27), p.514-518

2015

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AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4481-4483

2002

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Polarity control in MBE growth of III-nitrides, and its device application

Current applied physics, 2002-08, Vol.2 (4), p.305-310

2002

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Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN12-08JN12-4

2013

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High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4454-4457

2002

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High accuracy equivalent circuit model for GaN GIT bi-directional switch

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.378-381

2016

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Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2309-2312

2003

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Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch

Physica status solidi. C, 2017-08, Vol.14 (8), p.n/a

2017

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Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation

Applied physics letters, 2006-05, Vol.88 (20), p.201904-201904-3

2006

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Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2643-2649

2012

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Nd } Fe } N } Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission

High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd–Fe–N magnetic material

Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer

Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates

Equivalent circuit modeling in GaN wireless power transmission including stray inductance and capacitance by measuring radiated emission

Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)

Study on AlGaN/GaN growth on carbonized Si substrate

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication

Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector

Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors

Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal-organic chemical vapor deposition

AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor

Polarity control in MBE growth of III-nitrides, and its device application

Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process

High accuracy equivalent circuit model for GaN GIT bi-directional switch

Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch

Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation

Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

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