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Comparing the Spatial Accuracy of Digital Surface Models from Four Unoccupied Aerial Systems: Photogrammetry Versus LiDAR

Remote sensing (Basel, Switzerland), 2020-09, Vol.12 (17), p.2806

2020

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Dislocation bending and tensile stress generation in GaN and AlGaN films

Journal of crystal growth, 2012-11, Vol.359, p.35-42

2012

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Organization-environment adaptation: A macro-level shift in modeling work distress and morale

Journal of organizational behavior, 2013-07, Vol.34 (5), p.629-647

2013

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2020-06, Vol.49 (6), p.3455-3464

2020

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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Materials science forum, 2020-07, Vol.1004, p.393-400

2020

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Prismatic Slip in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

2017

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Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Journal of crystal growth, 2016-10, Vol.452, p.35-38

2016

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High Quality 150 mm 4H SiC Wafers for Power Device Production

Materials science forum, 2015-06, Vol.821-823, p.56-59, Article 56

2015

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Development and Characterization of Au−YSZ Surface Plasmon Resonance Based Sensing Materials: High Temperature Detection of CO

The journal of physical chemistry. B, 2006-07, Vol.110 (27), p.13508-13511

2006

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Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Materials Science Forum, 2016-05, Vol.858 (5, 2016), p.105-108, Article 105

2016

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Large Area 4H SiC Products for Power Electronic Devices

Materials Science Forum, 2016-05, Vol.858, p.11-14, Article 11

2016

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Urban Land, Household Debt and Overseas Borrowing

Journal of Australian political economy, 2009 (64), p.157-164

Ian Manning

2009

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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Materials science forum, 2014-02, Vol.778-780, p.103-108

2014

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A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2024-08, Vol.434, p.123-127

2024

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In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

Applied physics letters, 2008-09, Vol.93 (11)

2008

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Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

Materials science forum, 2020-07, Vol.1004, p.37-43

2020

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Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing

Materials science forum, 2022-05, Vol.1062, p.246-250

2022

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Measurement of Dislocation Density in SiC Wafers Using Production XRT

Materials science forum, 2022-05, Vol.1062, p.304-308

2022

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Advances in 200 mm 4H SiC Wafer Development and Production

Materials science forum, 2022-05, Vol.1062, p.54-58

2022

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Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Solid state phenomena, 2023-05, Vol.343, p.15-19

2023

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Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Materials science forum, 2020-07, Vol.1004, p.44-50

2020

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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Journal of electronic materials, 2021-06, Vol.50 (6), p.3258-3265

2021

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Impact of Subsurface Damage on SiC Wafer Shape

Materials science forum, 2019-07, Vol.963, p.530-533

2019

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The mineral resource boom and the economy of South West Queensland

National economic review, 2013-01 (68), p.8-22

Manning, Ian

2013

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Income tax zone rebates

National economic review, 2013-01 (68), p.23-39

Manning, Ian

2013

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Comparing the Spatial Accuracy of Digital Surface Models from Four Unoccupied Aerial Systems: Photogrammetry Versus LiDAR

Dislocation bending and tensile stress generation in GaN and AlGaN films

Organization-environment adaptation: A macro-level shift in modeling work distress and morale

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

High Quality 150 mm 4H SiC Wafers for Power Device Production

Development and Characterization of Au−YSZ Surface Plasmon Resonance Based Sensing Materials: High Temperature Detection of CO

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Large Area 4H SiC Products for Power Electronic Devices

Urban Land, Household Debt and Overseas Borrowing

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC

In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing

Measurement of Dislocation Density in SiC Wafers Using Production XRT

Advances in 200 mm 4H SiC Wafer Development and Production

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Impact of Subsurface Damage on SiC Wafer Shape

The mineral resource boom and the economy of South West Queensland

Income tax zone rebates

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